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Hitachi Power Semiconductor Device Electronic Components Datasheet



D1138

2SD1138



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2SD1138
Silicon NPN Triple Diffused
Application
Low frequency high voltage power amplifier TV vertical deflection output complementary pair with
2SB861
Outline
TO-220AB
1
23
1. Base
2. Collector
(Flange)
3. Emitter



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D1138 pdf
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Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (peak)
PC
PC * 1
Tj
Tstg
Rating
200
150
6
2
5
1.8
30
150
–45 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO
voltage
150
Emitter to base breakdown
voltage
V(BR)EBO
6
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CBO
hFE1*1
hFE2
VCE (sat)
60
60
Base to emitter voltage
VBE — —
Collector output capacitance Cob — 20
Note: 1. The 2SD1138 is grouped by hFE1 as follows.
2. Pulse test.
Max Unit
—V
—V
1 µA
320
3.0 V
1.0 V
— pF
Test conditions
IC = 50 mA, RBE =
IE = 5 mA, IC = 0
VCB = 120 V, IE = 0
VCE = 4 V, IC = 50 mA
VCE = 10 V, IC = 500 mA*2
IC = 500 mA, IB = 50 mA*2
VCB = 4 V, IC = 50 mA
VCB = 100 V, IE = 0, f = 1 MHz
B
60 to 120
CD
100 to 200 160 to 320
2



Part Number D1138
Description 2SD1138
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 6 Pages
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