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Hitachi Power Semiconductor Device Electronic Components Datasheet



D1137

2SD1137



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D1137 pdf
2SD1137
Silicon NPN Triple Diffused
Application
Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (peak)
PC
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Rating
100
100
4
4
5
1.8
40
150
–45 to +150
Unit
V
V
V
A
A
W
W
°C
°C



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D1137 pdf
2SD1137
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
100
Emitter to base breakdown
voltage
V(BR)EBO
4
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
I CEO
I EBO
hFE 50
25
Collector to emitter saturation VCE (sat)
voltage
Note: 1. Pulse test.
Typ
Max Unit
—V
—V
100 µA
50 µA
250
350
1.0 V
Test conditions
IC = 10 mA, RBE =
IE = 1 mA, IC = 0
VCE = 80 V, RBE =
VEB = 3.5 V, IC = 0
VCE = 4 V
IC = 0.5 A*1
IC = 50 mA
IC = 1 A, IB = 0.1 A
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
10
(10 V, 4 A)
3
1.0
DC Operation
TC = 25°C
(40 V, 1 A)
0.3
0.1
(100 V, 50 mA)
0.03
0.01
1
3
10 30 100 300 1,000
Collector to emitter voltage VCE (V)
2



Part Number D1137
Description 2SD1137
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 5 Pages
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