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Renesas Electronics Components Datasheet


D1133

2SD1133



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D1133 pdf
2SD1133, 2SD1134
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB857 and 2SB858
Outline
TO-220AB
ADE-208-905 (Z)
1st. Edition
September 2000
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Ratings
2SD1133
70
50
5
4
8
40
150
–45 to +150
2SD1134
70
60
5
4
8
40
150
–45 to +150
Unit
V
V
V
A
A
W
°C
°C
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D1133 pdf
2SD1133, 2SD1134
Electrical Characteristics (Ta = 25°C)
2SD1133
2SD1134
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
70
70
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
50
60
V
IC = 50 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
5
——5
——V
IE = 10 µA, IC = 0
Collector cutoff current ICBO
— —1
— —1
µA VCB = 50 V, IE = 0
DC current transfer ratio hFE1*1
60 — 320 60 — 320
VCE = 4V IC = 1 A*2
hFE2 35 — — 35 — —
IC = 0.1 A*2
Collector to emitter
saturation voltage
VCE(sat) — — 1 — — 1 V IC = 2 A, IB = 0.2 A*2
Base to emitter voltage VBE
— —1 — —1
Gain bandwidth product fT
— 7 —— 7 —
Notes: 1. The 2SD1133 and 2SD1134 are grouped by hFE1 as follows.
2. Pulse test.
V VCE = 4 V, IC = 1 A*2
MHz VCE = 4 V, IC = 0.5 A*2
B
60 to 120
CD
100 to 200 160 to 320
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
5 (10 V, 4 A)
2
ICmax(Continuous)
(20 V,
2
DC
A)
Operation
1.0
(TC = 25°C)
0.5
(50 V, 0.24 A)
0.2
(60 V, 0.15 A)
0.1
0.05
1
2SD1133
2SD1134
2 5 10 20 50 100
Collector to emitter voltage VCE (V)
Free Datasheet http://www.datasheet4u.com/



Part Number D1133
Description 2SD1133
Maker Renesas - Renesas
Total Page 3 Pages
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