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Hitachi Power Semiconductor Device Electronic Components Datasheet



D1115

2SD1115



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D1115 pdf
2SD1115(K)
Silicon NPN Triple Diffused
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Application
High voltage switching, igniter
Outline
TO-220AB
1
23
1. Base
2. Collector
(Flange)
3. Emitter
2
1
4.5 k
(Typ)
250
(Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC*1
Tj
Tstg
Ratings
400
300
7
3
6
40
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C



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D1115 pdf
2SD1115(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO
voltage
400
Collector to emitter sustain
voltage
VCEO(sus)
300
Emitter to base breakdown
voltage
V(BR)EBO
7
www.DataSheet4U.com Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
ICEO
hFE
VCE(sat)
500
Base to emitter saturation
voltage
VBE(sat)
Turn on time
Turn off time
Note: 1. Pulse test.
ton
toff
Typ
1.0
22
Max
100
1.5
2.0
Unit
V
Test conditions
IC = 0.1 mA, IE = 0
V IC = 2 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
V IE = 50 mA, IC = 0
µA VCE = 300 V, RBE =
VCE = 2 V, IC = 2 A*1
V IC = 2 A, IB = 20 mA*1
V
µs IC = 2 A, IB1 = –IB2 = 20 mA
µs
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
10
3
iC (peak)
IC (max)
Ta = 25°C
1.0
0.3
0.1
0.03
0.01
0.003
0.005
0.5 1.0 2 5 10 20 50 100200 500
Collector to emitter voltage VCE (V)
2



Part Number D1115
Description 2SD1115
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 4 Pages
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