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Sanyo Electric Components Datasheet


D1111

2SD1111



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D1111 pdf
Ordering number:EN751C
NPN Epitaxial Planar Silicon Darlington Transistor
2SD1111
Driver Applications
Applications
· Motor drivers, printer hammer drivers, relay drivers,
voltage regulator control.
Features
· High DC Current Gain (5000 or greater).
· Large current capacity and wide ASO.
· Low saturation voltage (VCE(sat)=0.8V typ).
Package Dimensions
unit:mm
2003B
[2SD1111]
5.0
4.0 4.0
0.45
0.5
0.45 0.44
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=40V, IE=0
VEB=8V, IC=0
VCE=2V, IC=50mA
VCE=2V, IC=500mA
VCE=5V, IC=50mA
VCB=10V, f=1MHz
123
1.3 1.3
1 : Emitter
2 : Collector
3 : Base
JEDEC : TO-92
EIAJ : SC-43
SANYO : NP
Ratings
80
50
10
0.7
2
600
150
–55 to +150
Unit
V
V
V
A
A
mW
˚C
˚C
Ratings
min typ max
Unit
0.1 µA
0.1 µA
5000
4000
200 MHz
10 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/5277KI/3015MW, TS No.751–1/3



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D1111 pdf
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Electrical Connection
2SD1111
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=100mA, IB=0.1mA
IC=100mA, IB=0.1mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
Ratings
min typ
0.8
1.3
80
50
10
max
1.2
2.0
Unit
V
V
V
V
V
No.751–2/3



Part Number D1111
Description 2SD1111
Maker Sanyo Semicon Device - Sanyo Semicon Device
Total Page 3 Pages
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