http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




INCHANGE
INCHANGE


D1069

Silicon NPN Power Transistor



No Preview Available !

D1069 pdf
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1069
DESCRIPTION
·High Collector Current Capability
·High Collector Power Dissipation Capability
·Built-in Damper Diode
APPLICATIONS
·TV horizontal deflection output applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
300 V
VCEO Collector-Emitter Voltage
150 V
VEBO Emitter-Base Voltage
6V
IC Collector Current-Continuous
7A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
Collector Power Dissipation
Ta=25
PC
Collector Power Dissipation
TC=25
Tj Junction Temperature
Tstg Storage Ttemperature Range
2A
1.75
W
40
150
-55~150
isc Websitewww.iscsemi.cn



No Preview Available !

D1069 pdf
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1069
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.5A
ICES Collector Cutoff Current
VCE= 250V; VBE= 0
hFE DC Current Gain
IC= 5A ; VCE= 1.5V
fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V
VECF
C-E Diode Forward Voltage
IF= 6A
tf Fall Time
ICP= 5A; IB1(end)= 0.5A
MIN TYP. MAX UNIT
150 V
300 V
6V
1.5 V
1.5 V
1 mA
10
18 MHz
1.8 V
1.0 μs
isc Websitewww.iscsemi.cn



Part Number D1069
Description Silicon NPN Power Transistor
Maker INCHANGE - INCHANGE
Total Page 2 Pages
PDF Download
D1069 pdf
Download PDF File
D1069 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
D10 Memory Micromodules General Information for D1/ D2 and C Packaging D10
STMicroelectronics
PDF
D1000 2SD1000 D1000
Renesas
PDF
D1001 2SD1001 D1001
Renesas
PDF
D1001UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED D1001UK
Seme LAB
PDF
D1002UK METAL GATE RF SILICON FET D1002UK
Seme LAB
PDF
D1003UK METAL GATE RF SILICON FET D1003UK
Seme LAB
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components