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Sanyo Electric Components Datasheet


D1061

2SD1061



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D1061 pdf
Ordering number:687G
PNP/NPN Epitaxial Planar Silicon Transistors
2SB825/2SD1061
50V/7A Switching Applications
Applications
· Universal high current switching as solenoid driving,
high speed inverter and converter.
Features
· Low saturation voltage : VCE(sat)=(–)0.4V max.
· Wide ASO
Package Dimensions
unit:mm
2010C
[2SB825/2SD1061]
( ) : 2SB825
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)5A
VCE=(–)5V, IC=(–)1A
* : The 2SB825/2SD1061 are classified by 1A hFE as follows :
70 Q 140 100 R 200 140 S 280
JEDEC : TO-220AB
EIAJ : SC-46
1: Base
2 : Collector
3 : Emitter
Ratings
(–)60
(–)50
(–)6
(–)7
(–)12
40
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
70*
30
10
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/D251MH/4027KI/3205MW/0619KI No.687–1/4



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D1061 pdf
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Switching Time Test Circuit
2SB825/2SD1061
Symbol
Conditions
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tf
IC=(–)4A, IB=(–)0.4A
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified test circuit.
See specified test circuit.
tstg See specified test circuit.
Ratings
min typ
(–)60
(–)50
(–)6
0.2
(0.1)
0.3
(0.7)
0.9
max
(–)0.4
Unit
V
V
V
V
µs
µs
µs
µs
µs
No.687–2/4



Part Number D1061
Description 2SD1061
Maker Sanyo Semicon Device - Sanyo Semicon Device
Total Page 4 Pages
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