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STMicroelectronics Electronic Components Datasheet


D1047

High power NPN epitaxial planar bipolar transistor



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D1047 pdf
2SD1047
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 140 V
Typical ft = 20 MHz
Fully characterized at 125 oC
Application
Power supply
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2SD1047
April 2011
Marking
2SD1047
Package
TO-3P
Doc ID 018729 Rev 1
Packaging
Tube
1/10
www.st.com
10



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D1047 pdf
Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
TJ
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature
Max. operating junction temperature
Table 3.
Symbol
Rthj-case
Thermal data
Parameter
Thermal resistance junction-case ____max
2SD1047
Value
200
140
6
12
20
100
-65 to 150
150
Unit
V
V
V
A
A
W
°C
°C
Value
1.25
Unit
°C/W
2/10 Doc ID 018729 Rev 1



Part Number D1047
Description High power NPN epitaxial planar bipolar transistor
Maker STMicroelectronics - STMicroelectronics
Total Page 10 Pages
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