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Seme LAB
Seme LAB


D1027UK

METAL GATE RF SILICON FET



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D1027UK pdf
TetraFET
D1027UK
MECHANICAL DATA
C
(2 pls)
HD
1
B
2
5
E
(4 pls)
F
I
3
4
G
(typ)
P
(2 pls) A
PIN 1
PIN 3
PIN 5
NM
O
DR
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM Millimetres Tol.
A 19.05 0.50
B 10.77 0.13
C 45°
D 9.78 0.13
E 5.71 0.13
F 27.94 0.13
G 1.52R 0.13
H 10.16 0.13
I 22.22 MAX
J 0.13 0.02
K 2.72 0.13
M 1.70 0.13
N 5.08 0.50
O 34.03 0.13
P 1.57R 0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 28V – 175MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
438W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
30A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 2/00



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D1027UK pdf
D1027UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source Breakdown
Voltage
IDSS
Zero Gate Voltage
Drain Current
IGSS
Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
Gate Threshold Voltage
VGS(th)match Matching Between Sides
PER SIDE
VGS = 0
ID = 100mA
VDS = 28V
VGS = 20V
ID = 10mA
VDS = 10V
ID = 10mA
VGS = 0
VDS = 0
VDS = VGS
ID = 6A
VDS = VGS
70
1
4.8
GPS
h
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
TOTAL DEVICE
PO = 150W
VDS = 28V
IDQ = 2.4A
f = 175MHz
13
50
20:1
Ciss
Coss
Crss
PER SIDE
Input Capacitance
VDS = 28V VGS = –5V f = 1MHz
Output Capacitance
VDS = 28V VGS = 0 f = 1MHz
Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
6 mA
1 mA
7V
mhos
0.1 V
dB
%
360 pF
180 pF
15 pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 0.4°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 2/00



Part Number D1027UK
Description METAL GATE RF SILICON FET
Maker Seme LAB - Seme LAB
Total Page 6 Pages
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