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Cypress Semiconductor Electronic Components Datasheet



CY15B104Q

4-Mbit (512 K x 8) Serial (SPI) F-RAM



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CY15B104Q pdf
CY15B104Q
4-Mbit (512 K × 8) Serial (SPI) F-RAM
4-Mbit (512 K × 8) Serial (SPI) F-RAM
Features
4-Mbit ferroelectric random access memory (F-RAM) logically
organized as 512 K × 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and
Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 A active current at 1 MHz
100 A (typ) standby current
3 A (typ) sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 C to +85 C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (TDFN) package
Restriction of hazardous substances (RoHS) compliant
Functional Description
The CY15B104Q is a 4-Mbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the CY15B104Q performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared to other
nonvolatile memories. The CY15B104Q is capable of supporting
1014 read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the CY15B104Q ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The CY15B104Q provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15B104Q uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
industrial temperature range of –40 C to +85 C.
For a complete list of related documentation, click here.
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
Instruction Register
512 K x 8
F-RAM Array
Address Register
Counter
19
8
SI SO
Data I/O Register
3
Nonvolatile Status
Register
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-94240 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 3, 2015



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CY15B104Q pdf
CY15B104Q
Contents
Pinouts .............................................................................. 3
Pin Definitions .................................................................. 3
Overview ............................................................................ 4
Memory Architecture ................................................... 4
Serial Peripheral Interface (SPI) Bus .......................... 4
SPI Overview ............................................................... 4
SPI Modes ................................................................... 5
Power Up to First Access ............................................ 6
Command Structure .................................................... 6
WREN - Set Write Enable Latch ................................. 6
WRDI - Reset Write Enable Latch ............................... 6
Status Register and Write Protection ............................. 7
Read Status Register (RDSR) ..................................... 7
Write Status Register (WRSR) .................................... 7
Memory Operation ............................................................ 8
Write Operation ........................................................... 8
Read Operation ........................................................... 8
Fast Read Operation ................................................... 8
HOLD Pin Operation ................................................. 10
Sleep Mode ............................................................... 10
Device ID ................................................................... 11
Endurance ................................................................. 11
Maximum Ratings ........................................................... 12
Operating Range ............................................................. 12
DC Electrical Characteristics ........................................ 12
Data Retention and Endurance ..................................... 13
Capacitance .................................................................... 13
Thermal Resistance ........................................................ 13
AC Test Conditions ........................................................ 13
AC Switching Characteristics ....................................... 14
Power Cycle Timing ....................................................... 16
Ordering Information ...................................................... 17
Ordering Code Definitions ......................................... 17
Package Diagrams .......................................................... 18
Acronyms ........................................................................ 20
Document Conventions ................................................. 20
Units of Measure ....................................................... 20
Document History Page ................................................. 21
Sales, Solutions, and Legal Information ...................... 22
Worldwide Sales and Design Support ....................... 22
Products .................................................................... 22
PSoC® Solutions ...................................................... 22
Cypress Developer Community ................................. 22
Technical Support ..................................................... 22
Document Number: 001-94240 Rev. *C
Page 2 of 22



Part Number CY15B104Q
Description 4-Mbit (512 K x 8) Serial (SPI) F-RAM
Maker Cypress Semiconductor - Cypress Semiconductor
Total Page 22 Pages
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