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Cypress Semiconductor Electronic Components Datasheet



CY15B102Q

2-Mbit (256 K x 8) Serial (SPI) Automotive F-RAM


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CY15B102Q pdf
CY15B102Q
2-Mbit (256 K × 8) Serial (SPI) Automotive
F-RAM
2-Mbit (256 K × 8) Serial (SPI) Automotive F-RAM
Features
2-Mbit ferroelectric random access memory (F-RAM) logically
organized as 256 K × 8
High-endurance 10 trillion (1013) read/writes
121-year data retention (See the Data Retention and
Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 25 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
5 mA active current at 25 MHz
750 A standby current
20 A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Automotive-E temperature: –40 C to +125 C
8-pin small outline integrated circuit (SOIC) package
AEC Q100 Grade 1 compliant
Restriction of hazardous substances (RoHS) compliant
Functional Overview
The CY15B102Q is a 2-Mbit nonvolatile memory employing an
advanced ferroelectric process. F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 121 years while eliminating the complexities,
overhead, and system-level reliability problems caused by serial
flash, EEPROM, and other nonvolatile memories.
Unlike serial flash and EEPROM, the CY15B102Q performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The CY15B102Q is capable of supporting
1013 read/write cycles, or 10 million times more write cycles than
EEPROM.
These capabilities make the CY15B102Q ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The CY15B102Q provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15B102Q uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
Automotive-E temperature range of –40 C to +125 C.
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
256 K x 8
F-RAM Array
Instruction Register
Address Register
Counter
18
8
SI SO
Data I/O Register
3
Nonvolatile Status
Register
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-89166 Rev. *E
• San Jose, CA 95134-1709 • 408-943-2600
Revised August 14, 2015



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CY15B102Q pdf
CY15B102Q
Contents
Pinout ................................................................................ 3
Pin Definitions .................................................................. 3
Overview............................................................................ 4
Memory Architecture........................................................ 4
Serial Peripheral Interface - SPI Bus .............................. 4
SPI Overview............................................................... 4
SPI Modes................................................................... 5
Power Up to First Access ............................................ 6
Command Structure .................................................... 6
WREN - Set Write Enable Latch ................................. 6
WRDI - Reset Write Enable Latch............................... 6
Status Register and Write Protection ............................. 7
RDSR - Read Status Register..................................... 7
WRSR - Write Status Register .................................... 7
Memory Operation............................................................ 8
Write Operation ........................................................... 8
Read Operation ........................................................... 8
Fast Read Operation ................................................... 8
HOLD Pin Operation ................................................. 10
Sleep Mode ............................................................... 10
Device ID................................................................... 11
Endurance ................................................................. 11
Maximum Ratings........................................................... 12
Operating Range............................................................. 12
DC Electrical Characteristics ........................................ 12
Data Retention and Endurance ..................................... 13
Example of an F-RAM Life Time in an AEC-Q100 Automotive
Application ...................................................................... 13
Capacitance .................................................................... 13
Thermal Resistance........................................................ 13
AC Test Conditions ........................................................ 13
AC Switching Characteristics ....................................... 14
Power Cycle Timing ....................................................... 16
Ordering Information...................................................... 17
Ordering Code Definitions ......................................... 17
Package Diagrams.......................................................... 18
Acronyms ........................................................................ 19
Document Conventions ................................................. 19
Units of Measure ....................................................... 19
Document History Page ................................................. 20
Sales, Solutions, and Legal Information ...................... 22
Worldwide Sales and Design Support....................... 22
Products .................................................................... 22
PSoC® Solutions ...................................................... 22
Cypress Developer Community................................. 22
Technical Support ..................................................... 22
Document Number: 001-89166 Rev. *E
Page 2 of 22



Part Number CY15B102Q
Description 2-Mbit (256 K x 8) Serial (SPI) Automotive F-RAM
Maker Cypress Semiconductor - Cypress Semiconductor
Total Page 22 Pages
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