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Cypress Semiconductor Electronic Components Datasheet



CY15B101N

1-Mbit (64K x 16) Automotive F-RAM Memory



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CY15B101N pdf
CY15B101N
1-Mbit (64K × 16) Automotive F-RAM Memory
1-Mbit (64K × 16) Automotive F-RAM Memory
Features
1-Mbit ferroelectric random access memory (F-RAM™)
logically organized as 64K × 16
Configurable as 128K × 8 using UB and LB
High-endurance 100 trillion (1014) read/writes
151-year data retention (see the Data Retention and
Endurance table)
NoDelay™ writes
Page-mode operation for 30-ns cycle time
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 64K × 16 SRAM pinout
60-ns access time, 90-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface-mount solution, no rework steps
Superior for moisture, shock, and vibration
Low power consumption
Active current 7 mA (typ)
Standby current 120 A (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Automotive-A temperature: –40 C to +85 C
Logic Block Diagram
44-pin thin small outline package (TSOP) Type II
Restriction of hazardous substances (RoHS)-compliant
Functional Description
The CY15B101N is a 64K × 16 nonvolatile memory that reads
and writes similar to a standard SRAM. A ferroelectric random
access memory or F-RAM is nonvolatile, which means that data
is retained after power is removed. It provides data retention for
over 151 years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM (BBSRAM). Fast write-timing and high
write-endurance make the F-RAM superior to other types of
memory.
The CY15B101N operation is similar to that of other RAM
devices, and, therefore, it can be used as a drop-in replacement
for a standard SRAM in a system. Read cycles may be triggered
by CE or simply by changing the address and write cycles may
be triggered by CE or WE. The F-RAM memory is nonvolatile
due to its unique ferroelectric memory process. These features
make the CY15B101N ideal for nonvolatile memory applications
requiring frequent or rapid writes.
The device is available in a 400-mil, 44-pin TSOP-II
surface-mount package. Device specifications are guaranteed
over the Automotive-A temperature range –40 °C to +85 °C.
For a complete list of related resources, click here.
A15-0
A15-2
A1-0
CE
WE
UB, LB
OE
ZZ
Control
Logic
64K x 16 block
F-RAM Array
...
Column Decoder
I/O Latch & Bus Driver
DQ15-0
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-96058 Rev. *D
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 4, 2015



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CY15B101N pdf
CY15B101N
Contents
Pinout ................................................................................ 3
Pin Definitions .................................................................. 3
Device Operation .............................................................. 4
Memory Operation ....................................................... 4
Read Operation ........................................................... 4
Write Operation ........................................................... 4
Page Mode Operation ................................................. 4
Precharge Operation ................................................... 4
Sleep Mode ................................................................. 5
SRAM Drop-In Replacement ....................................... 5
Endurance ................................................................... 5
Maximum Ratings ............................................................. 6
Operating Range ............................................................... 6
DC Electrical Characteristics .......................................... 6
Data Retention and Endurance ....................................... 7
Capacitance ...................................................................... 7
Thermal Resistance .......................................................... 7
AC Test Conditions .......................................................... 7
AC Switching Characteristics ......................................... 8
SRAM Read Cycle ...................................................... 8
SRAM Write Cycle ....................................................... 9
Power Cycle and Sleep Mode Timing ........................... 13
Functional Truth Table ................................................... 14
Byte Select Truth Table .................................................. 14
Ordering Information ...................................................... 15
Ordering Code Definitions ......................................... 15
Package Diagram ............................................................ 16
Acronyms ........................................................................ 17
Document Conventions ................................................. 17
Units of Measure ....................................................... 17
Document History Page ................................................. 18
Sales, Solutions, and Legal Information ...................... 19
Worldwide Sales and Design Support ....................... 19
Products .................................................................... 19
PSoC® Solutions ...................................................... 19
Cypress Developer Community ................................. 19
Technical Support ..................................................... 19
Document Number: 001-96058 Rev. *D
Page 2 of 19



Part Number CY15B101N
Description 1-Mbit (64K x 16) Automotive F-RAM Memory
Maker Cypress Semiconductor - Cypress Semiconductor
Total Page 19 Pages
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