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Cypress Semiconductor Electronic Components Datasheet



CY14B101J

1-Mbit (128 K X 8) Serial (I2C) nvSRAM


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CY14B101J pdf
CY14C101J
PRELIMINARY
CY14B101J, CY14E101J
1 Mbit (128 K × 8) Serial (I2C) nvSRAM
Features
1-Mbit nonvolatile static random access memory (nvSRAM)
Internally organized as 128 K × 8
STORE to QuantumTrap nonvolatile elements initiated
automatically on power-down (AutoStore) or by using I2C
command (Software STORE) or HSB pin (Hardware STORE)
RECALL
CALL) or
to
by
IS2CRAcMomimniatiantded(SoofntwpaoreweRrE-uCpA(LPLo)wer-Up
RE-
Automatic STORE on power-down with a small capacitor (ex-
cept for CY14X101J1)
High reliability
Infinite read, write, and RECALL cycles
1 million STORE cycles to QuantumTrap
Data retention: 20 years at 85 °C
High speed I2C interface
Industry standard 100 kHz and 400 kHz speed
Fast-mode Plus: 1 MHz speed
High speed: 3.4 MHz
Zero cycle delay reads and writes
Write protection
Hardware protection using Write Protect (WP) pin
Software block protection for 1/4, 1/2, or entire array
I2C access to special functions
Nonvolatile STORE/RECALL
8 byte serial number
Manufacturer ID and Product ID
Sleep mode
Industry standard configurations
Operating voltages:
• CY14C101J: VCC = 2.4 V to 2.6 V
• CY14B101J: VCC = 2.7 V to 3.6 V
• CY14E101J: VCC = 4.5 V to 5.5 V
Industrial temperature
8- and 16-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Overview
The Cypress CY14C101J/CY14B101J/CY14E101J combines a
1-Mbit nvSRAM[1] with a nonvolatile element in each memory
cell. The memory is organized as 128 K words of 8 bits each. The
embedded nonvolatile elements incorporate the QuantumTrap
technology, creating the world’s most reliable nonvolatile
memory. The SRAM provides infinite read and write cycles, while
the QuantumTrap cells provide highly reliable nonvolatile
storage of data. Data transfers from SRAM to the nonvolatile
elements (STORE operation) takes place automatically at
power-down (except for CY14X101J1). On power-up, data is
restored to the SRAM from the nonvolatile memory (RECALL
operation). The STORE and RECALL operations can also be
initiated by the user through I2C commands.
Configuration
Feature
AutoStore
Software
STORE
CY14X101J1
No
Yes
CY14X101J2
Yes
Yes
CY14X101J3
Yes
Yes
Low power consumption
Hardware
No
No
Yes
Average active current of 1 mA at 3.4 MHz operation
STORE
Average standby mode current of 150 uA
Sleep mode current of 8 uA
Logic Block Diagram
VCC VCAP
Serial Number
8x8
Manufacture ID/
Product ID
Power Control
Block
Sleep
Memory Control Register
Command Register
Quantrum Trap
128 K x 8
www.DataSSDheAet4U.com 2
SCL I C Control Logic
A2, A1
Slave Address
Decoder
WP
Control Registers Slave
Memory Slave
Memory
Address and Data
Control
SRAM
128 K x 8
STORE
RECALL
Note
1. Serial (I2C) nvSRAM is referred to as nvSRAM throughout the datasheet.
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 001-54050 Rev. *D
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 19, 2011
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CY14B101J pdf
PRELIMINARY
CY14C101J
CY14B101J, CY14E101J
Contents
Pinouts .............................................................................. 3
I2C Interface ...................................................................... 4
Protocol Overview ............................................................ 4
I2C Protocol – Data Transfer....................................... 4
Data Validity ...................................................................... 5
START Condition (S) ........................................................ 5
STOP Condition (P) .......................................................... 5
Repeated START (Sr) ....................................................... 5
Byte Format....................................................................... 5
Acknowledge/No-acknowledge....................................... 6
High-Speed Mode (Hs-mode) .......................................... 6
Serial Data Format in Hs-mode................................... 6
Slave Device Address ...................................................... 7
Memory Slave Device ................................................. 7
Control Registers Slave Device................................... 8
Memory Control Register ............................................ 8
Command Register ..................................................... 8
Write Protection (WP)....................................................... 9
AutoStore Operation ........................................................ 9
Hardware STORE and HSB pin Operation ..................... 9
Hardware RECALL (Power-Up) ................................ 10
Write Operation............................................................... 10
Read Operation............................................................... 10
Memory Slave Access.................................................... 10
Write nvSRAM........................................................... 10
Current nvSRAM Read.............................................. 11
Random Address Read ............................................. 13
Control Registers Slave ................................................. 14
Write Control Registers ................................................. 14
Current Control Registers Read ................................ 15
Random Control Registers Read .............................. 15
Serial Number ........................................................... 16
Executing Commands Using Command Register....... 17
Best Practices................................................................. 18
Maximum Ratings........................................................... 19
Operating Range............................................................. 19
DC Electrical Characteristics ........................................ 19
Data Retention and Endurance .................................... 20
Thermal Resistance........................................................ 20
AC Test Conditions ........................................................ 21
AC Switching Characteristics ....................................... 22
nvSRAM Specifications ................................................. 23
Software Controlled STORE/RECALL Cycles.............. 24
Hardware STORE Cycle ................................................. 25
Ordering Information...................................................... 26
Ordering Code Definitions ......................................... 27
Package Diagrams.......................................................... 28
Acronyms ........................................................................ 30
Document Conventions ................................................. 30
Units of Measure ....................................................... 30
Document History Page ................................................ 31
Sales, Solutions, and Legal Information ...................... 32
Worldwide Sales and Design Support....................... 32
Products .................................................................... 32
PSoC Solutions ......................................................... 32
www.DataSheet4U.com
Document #: 001-54050 Rev. *D
Page 2 of 32
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Part Number CY14B101J
Description 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
Maker Cypress Semiconductor - Cypress Semiconductor
Total Page 32 Pages
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