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Rohm Semiconductor Electronic Components Datasheet


B1412

2SB1412


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B1412 pdf
Low frequency transistor (20V,5A)
2SB1412
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.35V (Typ.)
(IC/IB = 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2118.
zStructure
Epitaxial planar type
PNP silicon transistor
zDimensions (Unit : mm)
2SB1412
ROHM : CPT3
EIAJ : SC-63
Denotes hFE
(1) Base
(2) Collector
(3) Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
30
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
5
IC
10
Collector power
dissipation
2SB1412
PC
1
10
Junction temperature
Tj
150
Storage temperature
Tstg
55 to 150
1 Single pulse, Pw=10ms
Unit
V
V
V
A(DC)
A(Pulse) 1
W
W(Tc=25°C)
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
Transition frequency
hFE
fT
Output capacitance
Measured using pulse current.
Cob
Min.
30
20
6
82
Typ.
0.35
120
60
Max.
0.5
0.5
1.0
390
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −20V
VEB= −5V
IC/IB= −4A/ 0.1A
VCE= −2V, IC= −0.5A
VCE= −6V, IE=50mA, f=100MHz
VCB= −20V, IE=0A, f=1MHz
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.C



No Preview Available !

B1412 pdf
2SB1412
zPackaging specifications and hFE
Package
Taping
Code
TL
Type
Basic ordering
hFE unit (pieces)
2500
2SB1412 PQR
hFE values are classified as follows :
Item P Q R
hFE 82 to 180 120 to 270 180 to 390
zElectrical characteristic curves
10
5 VCE= 2V
2
1
500m
Ta=100°C
25°C
25°C
200m
100m
50m
20m
10m
5m
2m
1m
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
5 50mA
45mA
40mA
4 35mA
3
2
1
30m25AmA
Ta=25°C
20mA
15mA
10mA
5mA
IB=0A
0
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
Data Sheet
5k
Ta=25°C
2k
1k
500
VCE= 5V
200
100 2V
1V
50
20
10
5
1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs.
collector current ( )
5k
VCE= −1V
2k
1k
500
200
100 Ta=100°C
25°C
50 25°C
20
10
5
1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs.
collector current ( )
5
lC/lB=10
2
1
0.5
0.2
0.1
Ta=100°C
0.05
25°C
25°C
0.02
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( )
5k
VCE= −2V
2k
1k
500
200
100 Ta=100°C
25°C
50 25°C
20
10
5
1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain vs.
collector current ( )
5
lC/lB=30
2
1 Ta=100°C
25°C
0.5
0.2
0.1
0.05
25°C
0.02
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.8 Collector-emitter saturation
voltage vs. collector current ( )
5
Ta=25°C
2
1
0.5
0.2
0.1
0.05
IC/IB=50/1
4300///111
10/1
0.02
0.01
2m 5m 0.0-0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
5
lC/lB=40
2 25°C
1 25°C
0.5
0.2
0.1
0.05
Ta=100°C
0.02
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.9 Collector-emitter saturation
voltage vs. collector current ( )
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/3
2009.12 - Rev.C



Part Number B1412
Description 2SB1412
Maker Rohm - Rohm
Total Page 4 Pages
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