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Rohm Semiconductor Electronic Components Datasheet


B1240

2SB1240


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Transistors
2SB1188 / 2SB1182 / 2SB1240
Medium power transistor (32V, 2A)
2SB1188 / 2SB1182 / 2SB1240
!Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SD1766 /
2SD1758 / 2SD1862
!Structure
Epitaxial planar type
PNP silicon transistor
!External dimensions (Units : mm)
2SB1188
2SB1182
4.5
+0.2
0.1
1.6±0.1
1.5
+0.2
0.1
6.5±0.2
5.1+−00..21
C0.5
2.3+−00..21
0.5±0.1
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4
+0.1
0.05
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
Abbreviated symbol: BC
2SB1240
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
!Absolute maximum ratings (Ta=25°C)
Denotes hFE
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Limits
40
32
5
2
3
Collector power
dissipation
2SB1188
2SB1182
PC
0.5
2
10
2SB1240
1
Junction temperature
Tj 150
Storage temperature
Tstg 55~+150
1 Single pulse, PW=100ms
2 When mounted on a 40×40×0.7 mm ceramic board.
3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
(1) Emitter
(2) Collector
(3) Base
Unit
V
V
V
A(DC)
A(Pulse) 1
W
W 2
W(TC=25°C)
W 3
°C
°C



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Transistors
2SB1188 / 2SB1182 / 2SB1240
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Measured using pulse current.
Cob
Min.
40
32
5
82
Typ.
0.5
100
50
Max.
1
1
0.8
390
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−20V
VEB=−4V
IC/IB=−2A/0.2A
VCE=−3V, IC=−0.5A
VCE=−5V, IE=0.5A, f=30MHz
VCB=−10V, IE=0A, f=1MHz
!Packaging specifications and hFE
Type
2SB1188
2SB1182
2SB1240
Package
Code
hFE Basic ordering unit (pieces)
PQR
PQR
PQR
T100
1000
Taping
TL
2500
TV2
2500
hFE values are classified as follows :
Item P
Q
hFE 82~180 120~270
R
180~390
!Electrical characteristic curves
1000 Ta=100°C
500
25°C
40°C
200
100
50
VCE=−3V
20
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
0.5
Ta=25°C 2.5mA
0.4
0.3
0.2
2.25mA
2mA
1.75mA
1.5mA
1.25mA
1mA
750µA
500µA
0.1
250µA
0 IB=0A
0 0.4 0.8 1.2 1.6 2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
500 Ta=25°C
VCE=−6V
3V
1V
200
100
50
20 5 10 20 50 100 200 500 1000 2000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector current ( Ι )



Part Number B1240
Description 2SB1240
Maker ROHM Electronics - ROHM Electronics
Total Page 3 Pages
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