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Rohm Semiconductor Electronic Components Datasheet


B1238

2SB1238



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B1238 pdf
Medium power transistor(80V, 0.7A)
2SB1189 / 2SB1238
Features
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
2) Complements the 2SD1767 / 2SD1859.
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
80
Collector-emitter voltage
VCEO
80
Emitter-base voltage
VEBO
5
Collector current
IC 0.7
Collector power
dissipation
2SB1189
2SB1238
PC
0.5
2
1
Junction temperature
Tj 150
Storage temperature
Tstg 55 to +150
1 When mounted on a 40×40×0.7 mm ceramic board.
2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A
W 1
2
°C
°C
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
2SB1189
MPT3
QR
BD
T100
1000
2SB1238
ATV
QR
TV2
2500
Dimensions (Unit : mm)
2SB1189
4.0
1.0 2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
2SB1238
6.8
(1) Base
(2) Collector
(3) Emitter
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ.
80
80
5
−−
−−
− −0.2
120
100
14
Max.
0.5
0.5
0.4
390
20
Unit
V
V
V
μA
μA
V
MHz
pF
Conditions
IC=−50μA
IC=−2mA
IE=−50μA
VCB=−50V
VEB=−4V
IC/IB=−500mA/50mA
VCE/IC=−3V/0.1A
VCE=−10V, IE=50mA, f=100MHz
VCB=−10V, IE=0A, f=1MHz
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.07 - Rev.B



No Preview Available !

B1238 pdf
2SB1189 / 2SB1238
Electrical characteristics curves
1.0
Ta=25°C
0.8
10mA
9mA
0.6
0.4
8m7AmA
6mA
5mA
4mA
3mA
2mA
0.2 1mA
0 IB= 0mA
0
2 4
6 8
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
50
Ta=25°C
20 VCE= −6V
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristics
Data Sheet
Ta=25°C
500
VCE= −5V
200
100
3V
50
1V
1 2 5 10 20 50 100 200 500
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current
Ta=25°C
0.2
0.1
IC/IB=20/1
0.05
IC/IB=10/1
0.02
0.01
1
5 10 20 50 100 200 500
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs.collector current
Ta=25°C
VCE= 5V
500
200
100
50
20
2 5 10 20 50
EMITTER CURRENT : IE (mA)
Fig.5 Gain bandwidth product vs. emitter current
Ta=25°C
f=1MHz
100 IE=0A
50
Cob
20
10
0.5 1
2
5 10 20
COLLECTOR TO BASE VOLTAGE : VCE (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
100 Cib
50
Ta=25°C
f=1MHz
IC=0A
20
10
0.5 1
2
5 10 20
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002 Ta=25°C
0.001 Single pulse
0.1 0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area (2SB1189)
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
2/2
2010.07 - Rev.B



Part Number B1238
Description 2SB1238
Maker Rohm - Rohm
Total Page 3 Pages
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