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Sanyo Electric Components Datasheet


B1216

2SB1216



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B1216 pdf
Ordering number:ENN2540A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1216/2SD1816
High-Current Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters,
converters, and other general high-current switching
applications.
Features
· Low collector-to-emitter saturation voltage.
· Good linearity of hFE.
· Small and slim package facilitating compactness of
sets.
· High fT.
· Fast switching time.
Package Dimensions
unit:mm
2045B
[2SB1216/2SD1816]
6.5
5.0 2.3
4 0.5
unit:mm
2044B
0.85
0.7
0.6
12 3
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
[2SB1216/2SD1816]
6.5 2.3
5.0 0.5
4
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2503TN (KT)/92098HA (KT)/8229MO/4087TA, TS No.2540–1/5



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B1216 pdf
2SB1216/2SD1816
( ) : 2SB1216
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE1
hFE2
VCB=()100V, IE=0
VEB=()4V, IC=0
VCE=()5V, IC=()0.5A
VCE=()5V, IC=()3A
Gain-Bandwidth Product
fT VCE=()10V, IC=()0.5A
Output Capacitance
Cob VCB=()10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=()2A, IB=()0.2A
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=()2A, IB=()0.2A
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
See specified Test Circuit
Storage Time
tstg See specified Test Circuit
Fall Time
tf See specified Test Circuit
* : The 2SB1216/2SD1816 are classified by 0.5A hFE as follows :
Rank
hFE
QRS T
70 to 140 100 to 200 140 to 280 200 to 400
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
OUTPUT
50
++
100µF
470µF
VBE= --5V
VCC=50V
IC=10IB1= --10IB2=2A
(For PNP, minus sign is omitted.)
Ratings
()120
()100
()6
()4
()8
1
20
150
55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
70*
40
()120
()100
()6
(130)
180
(65)40
150
(200)
()0.9
100
(800)
900
50
max
()1
()1
400*
400
(500)
()1.2
Unit
µA
µA
MHz
MHz
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
No.2540–2/5



Part Number B1216
Description 2SB1216
Maker Sanyo - Sanyo
Total Page 5 Pages
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