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B120WS-F

1 Amperes Surface Mount Schottky Barrier Rectifiers



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B120WS-F pdf
Schottky Barrier Rectifier
Chip Integration Technology Corporation
B120WS-F THRU B1100WS-F
1 Amperes Surface Mount Schottky Barrier Rectifiers
VOLTAGE : 20 TO 100Volts
Features
Outline
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Suffix "G" indicates Halogen-free part, ex.B120WSG-F.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
SOD-323F
0.106(2.7)
0.091(2.3)
0.012(0.3) Typ.
0.057(1.45)
0.041(1.05)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-323F
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Weight : Approximated 0.008 gram
0.016(0.4) Typ.
0.047(1.2)
0.031(0.8)
0.016(0.4) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Making code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Instantaneous Forward Voltage@1.0A, TA =25OC
Operating Temperature
Symbol
VRRM
VRMS
VDC
VF
TJ
B120WS-F B130WS-F B140WS-F B160WS-F B1100WS-F
12 13 14 16
10
20 30 40 60 100
14 21 28 42
70
20 30 40 60 100
0.50
0.70
0.81
-50 ~ +125
-50 ~ +150
UNIT
V
V
OC
Parameter
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
Conditions
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VR = VRRM TA = 25OC
VR = VRRM TA = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
MIN.
IR
RθJA
CJ
TSTG
-50
TYP.
88
120
MAX.
1.0
30
0.1
20
+150
UNIT
A
A
mA
OC/W
pF
OC
http://www.citcorp.com.tw/
TEL:886-3-6565228
FAX:886-3-6565091
1
Document ID : DS-12K52
Issued Date : 2010/05/05
Revised Date : 2010/10/08
Revision : B



No Preview Available !

B120WS-F pdf
Schottky Barrier Rectifier
Chip Integration Technology Corporation
B120WS-F THRU B1100WS-F
1 Amperes Surface Mount Schottky Barrier Rectifiers
VOLTAGE : 20 TO 100Volts
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
24
18
12
6
0
1
TJ=25OC
8.3ms Single Half
Sine Wave
JEDEC method
5 10
NUMBER OF CYCLES AT 60Hz
50 100
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
50
10
3.0
1.0 B1100WS-TFJ=25OC
Pulse Width 300us
1% Duty Cycle
0.1
.01
.1
.3 .5 .7 .9 1.1 1.3
FORWARD VOLTAGE,(V)
1.5
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
350
300
250
200
150
100
50
0
.01
FIG.4-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
http://www.citcorp.com.tw/
TEL:886-3-6565228
FAX:886-3-6565091
2
10
1.0
TJ=125OC
.1
TJ=25OC
.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
Document ID : DS-12K52
Issued Date : 2010/05/05
Revised Date : 2010/10/08
Revision : B



Part Number B120WS-F
Description 1 Amperes Surface Mount Schottky Barrier Rectifiers
Maker ETC - ETC
Total Page 2 Pages
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