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Sanyo Electric Components Datasheet


B1204

2SB1204


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B1204 pdf
Ordering number : EN2086C
2SB1204
SANYO Semiconductors
DATA SHEET
2SB1204
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Features
Low collector-to-emitter saturation voltage
High current and high fT
Excellent linearity of hFE
Fast switching speed
Small and slim package making it easy to make 2SB1204-applied sets smaller
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25°C
Conditions
Ratings
--60
--50
--6
--8
--12
1
20
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Package Dimensions unit : mm (typ)
7518-003
Package Dimensions unit : mm (typ)
7003-003
6.5 2.3
6.5
5.0
0.5 2SB1204S-E
5.0
4
2SB1204T-E
4
2.3
0.5
2SB1204S-TL-E
2SB1204T-TL-E
0.85
0.7
0.6
123
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
2.3 2.3
SANYO : TP
SANYO : TP-FA
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
B1204
RANK
LOT No.
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2,4
1
TL
3
http://semicon.sanyo.com/en/network
60612 TKIM TA-4032/N2503TN (KT)/92098HA (KT)/8309MO/3117AT, TS No.2086-1/9



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B1204 pdf
2SB1204
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB= --40V, IE=0A
VEB= --4V, IC=0A
VCE= --2V, IC= --0.5A
VCE= --2V, IC= --6A
VCE= --5V, IC= --1A
VCB= --10V, f=1MHz
IC= --4A, IB= --0.2A
IC= --4A, IB= --0.2A
IC= --10μA, IE=0A
IC= --1mA, RBE=
IE= --10μA, IC=0A
See specied Test Circuit
* : The 2SB1204 are classied by 0.5A hFE as follows :
Rank
Q
R
hFE
70 to 140
100 to 200
S
140 to 280
Switching Time Test Circuit
Ratings
min typ
70*
35
130
95
--250
--0.95
--60
--50
--6
50
450
20
max
--1
--1
400*
--500
--1.3
Unit
μA
μA
MHz
pF
mV
V
V
V
V
ns
ns
ns
T
200 to 400
PW=20Ms
D.C.b1%
INPUT
VR
IB1
IB2
RB
507
+
100MF
VBE=5V
IC= --10IB1=10IB2= --4A
OUTPUT
RL
+
470MF
VCC= --25V
Ordering Information
Device
2SB1204S-E
2SB1204T-E
2SB1204S-TL-E
2SB1204T-TL-E
Package
TP
TP
TP-FA
TP-FA
Shipping
500pcs./bag
500pcs./bag
700pcs./reel
700pcs./reel
memo
Pb Free
No.2086-2/9



Part Number B1204
Description 2SB1204
Maker Sanyo Semicon Device - Sanyo Semicon Device
Total Page 9 Pages
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