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Sanyo Electric Components Datasheet


B1166

2SB1166



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B1166 pdf
Ordering number:ENN2021A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1166/2SD1723
50V/8A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage.
· High fT.
· Excellent linearity of hFE.
· Fast switchint time.
Package Dimensions
unit:mm
2043B
[2SB1166/2SD1723]
8.0
4.0
2.0
2.7
1.6
0.8
0.8
0.6 0.5
( ) : 2SB1166
Specifications
Absolute Maximum Ratings at Ta = 25˚C
12 3
2.4
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
()60
()50
()6
()8
()12
1.2
20
150
55 to +150
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE1
hFE2
VCB=()40V, IE=0
VEB=()4V, IC=0
VCE=()2V, IC=()0.5A
VCE=()2V, IC=()6A
Gain-Bandwidth Product
fT VCE=()5V, IC=()1A
* : The 2SB1166/2SD1723 are classified by 0.5A hFE as follows :
Rank
Q
R
Ratings
min typ max
Unit
()1 µA
()1 µA
70* 400*
35
180 MHz
(130)
MHz
Continued on next page.
ST
hFE 70 to 140 100 to 200 140 to 280 200 to 400
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2021–1/4



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B1166 pdf
2SB1166/2SD1723
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
Cob VCB=()10V, f=1MHz
VCE(sat) IC=()4A, IB=()0.2A
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=()4A, IB=()0.2A
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
INPUT
VR
RB
OUTPUT
RL
50
++
100µF
470µF
VBE= --5V
VCC=25V
IC=10IB1= --10IB2=4A
(For PNP, the polarity is reversed.)
Ratings
min typ
65(95)
200
(250)
()0.95
()60
()50
()6
(50)50
500
(450)
20(20)
max
400
(500)
()1.3
Unit
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
--10
2SB1166
From top
--160mA
--8 --140mA
--120mA
--100mA
--6 --80mA
--4
--2
IC -- VCE
--60mA
--40mA
--20mA
--10mA
0 IB=0
0
--0.4
--0.8
--1.2
--1.6
--2.0
Collector-to-Emitter Voltage, VCE – V ITR09096
IC -- VCE
--5
2SB1166
--30mA
--4 --25mA
--20mA
--3
--15mA
--2 --10mA
--5mA
--1
0 IB=0
0 --2 --4 --6 --8 --10
Collector-to-Emitter Voltage, VCE – V ITR09098
10
2SD1723
From top
100mA
8 90mA
80mA
70mA
6 60mA
4
IC -- VCE
50mA
40mA
30mA
20mA
10mA
2
0 IB=0
0 0.4 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, VCE – V ITR09097
5
30mA
IC -- VCE
2SD1723
25mA
4
20mA
3 15mA
10mA
2
5mA
1
0 IB=0
0 2 4 6 8 10
Collector-to-Emitter Voltage, VCE – V ITR09099
No.2021–2/4



Part Number B1166
Description 2SB1166
Maker Sanyo - Sanyo
Total Page 4 Pages
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