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Sanyo Electric Components Datasheet


B1140

2SB1140



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Ordering number:ENN2069A
PNP Epitaxial Planar Silicon Transistor
2SB1140
20V/5A Switching Applications
Applications
· Strobes, power supplies, relay drivers, lamp drivers.
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity.
· Short switching time.
Package Dimensions
unit:mm
2042B
[2SB1140]
8.0
4.0
1.0 1.0
3.3
3.0
1.6
0.8
0.8
0.75 0.7
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
2.4
4.8
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE1
hFE2
Gain-Bandwidth Product
fT
* : The 2SB1140 is classified by 500mA hFE as follows :
VCB=20V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=4A
VCE=5V, IC=200mA
Rank
hFE
RST
100 to 200 140 to 280 200 to 400
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
25
20
5
5
8
0.5
1.5
10
150
55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
500 nA
500 nA
100*
400*
60
320 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2003TN (KOTO)/92098HA (KT)/4017KI/D176TA No.2069–1/4



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Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SB1140
Symbol
Conditions
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=10V, f=1MHz
IC=3A, IB=60mA
IC=3A, IB=60mA
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
See specified Test Circuti.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
OUTPUT
INPUT
VR
50
RB
+
100µF
RL
5
+
470µF
VBE=5V
VCC= --10V
IC=10IB1= --10IB2=--2A
(For PNP, the polarity is reversed.)
Ratings
min typ
60
250
1.0
25
20
5
40
200
10
max
500
1.3
Unit
pF
mV
V
V
V
V
ns
ns
ns
--5
From top
--100mA
--90mA
--4 --80mA
--70mA
--60mA
--3
IC -- VCE
--50mA
--40mA
--30mA
--20mA
--2
--10mA
--1
0 IB=0
0 --0.2 --0.4 --0.6 --0.8 --1.0
Collector-to-Emitter Voltage, VCE – V ITR09005
IC -- VBE
--6
VCE= --2V
--5
--4
--3
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE – V ITR09007
IC -- VCE
--5
--40mA --35mA
--4 --30mA
--25mA
--20mA
--3
--15mA
--2 --10mA
--1 --5mA
0
0
1000
7
5
3
2
IB=0
--1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE – V ITR09006
hFE -- IC
VCE= --2V
Ta=75°C
25°C
--25°C
100
7
5
3
2
7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10
Collector Current, IC – A
ITR09008
No.2069–2/4



Part Number B1140
Description 2SB1140
Maker Sanyo Semicon Device - Sanyo Semicon Device
Total Page 4 Pages
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