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Sanyo Electric Components Datasheet


B1136

2SB1136



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B1136 pdf
Ordering number:2092B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1136/2SD1669
50V/12A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other genral high-current switching applications.
Features
· Low-saturation collector-to-emitter voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
· Wide ASO leading to high resistance to breakdown.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2041A
[2SB1136/2SD1669]
( ) : 2SB1136
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)5A
VCE=(–)5V, IC=(–)1A
IC=(–)6A, IB=(–)0.6A
* : The 2SB1136/2SD1669 are classified by 1A hFE as follows :
70 Q 140 100 R 200 140 S 280
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Ratings
(–)60
(–)50
(–)6
(–)12
(–)15
2
30
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
70*
30
10
max
(–)0.1
(–)0.1
280*
(–)0.4
Unit
mA
mA
MHz
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/10996TS (KOTO) 8-8812/4277AT, TS No.2092–1/4



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B1136 pdf
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Rise Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB1136/2SD1669
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified Test Circuti.
tstg See specified Test Circuit.
tf See specified Test Circuit.
Ratings
min typ
(–)60
(–)50
(–)6
(0.2)
0.1
(0.4)
1.2
(0.1)
0.05
max
Unit
V
V
V
µs
µs
µs
µs
µs
µs
No.2092–2/4



Part Number B1136
Description 2SB1136
Maker Sanyo - Sanyo
Total Page 4 Pages
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