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Sanyo Electric Components Datasheet


B1134

2SB1134


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B1134 pdf
Ordering number:2091B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1134/2SD1667
50V/5A Switching Applications
Applications
· Relay drivers, high-speed inverters, and other general
high-current switching applications.
Features
· Low-saturation collector-to-emitter voltage :
VCE(sat)=–0.4V max/IC=(–)3A, IB=(–)0.3A.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2041A
[2SB1134/2SD1667]
( ) : 2SB1134
1 : Base
2 : Collector
3 : Emitter
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2×0.8mm)
SANYO : TO-220ML
Ratings
(–)60
(–)50
(–)6
(–)5
(–)9
2
25
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)3A
VCE=(–)5V, IC=(–)1A
VCB=(–)10V, f=1MHz
* : The 2SB1134/2SD1667 are classified by 1A hFE as follows :
70 Q 140 100 R 200
Ratings
min typ
70*
30
30
100
(160)
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
MHz
pF
pF
140 S 280
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/10996TS (KOTO) 8-8812/4107AT, TS No.2091–1/4



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B1134 pdf
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Rise Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB1134/2SD1667
Symbol
Conditions
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)3A, IB=(–)0.3A
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified Test Circuti.
See specified Test Circuit.
tf See specified Test Circuit.
Ratings
min typ
(–)60
(–)50
(–)6
0.1
(0.7)
1.4
0.2
max
(–)0.4
Unit
V
V
V
V
µs
µs
µs
µs
No.2091–2/4



Part Number B1134
Description 2SB1134
Maker Sanyo Semicon Device - Sanyo Semicon Device
Total Page 4 Pages
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