PNP Epitaxial Planar Silicon Transistor
Strobe, High-Current Switching Applications
· Strobes, power supplies, relay drivers, lamp drivers.
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity.
· Fast switching time.
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
Electrical Characteristics at Ta = 25˚C
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
* : The 2SB1131 is classified by 500mA hFE as follows :
100 R 200 140 S 280 200 T 400
EIAJ : SC-51
SANYO : MP
B : Base
C : Collector
E : Emitter
–55 to +150
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/8270MH/5217TA, TS No.2420–1/4