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Sanyo Electric Components Datasheet


B1119

2SB1119



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B1119 pdf
Ordering number:1785A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1119/2SD1619
LF Amplifier, Electronic Governor Applications
Features
· Very small size making it easy to provide high-
density, small-sized hybrid IC’s.
Package Dimensions
unit:mm
2038
[2SB1119/2SD1619]
( ) : 2SB1119
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)20V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)50mA
VCE=(–)2V, IC=(–)1A
VCE=(–)10V, IC=(–)50mA
* ; The 2SB1119/2SD1619 are classified by 50mA hFE as follows :
100 R 200 140 S 280 200 T 400 280 U 560
Marking 2SB1119 : BB
2SD1619 : DB
hFE rank : R, S, T, U
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
Ratings
(–)25
(–)25
(–)5
(–)1
(–)2
500
1.3
150
–55 to +150
Unit
V
V
V
A
A
mW
W
˚C
˚C
Ratings
min typ
100*
40
180
max
(–)0.1
(–)0.1
560*
Unit
µA
µA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4017KI/2065MW, TS No.1785–1/3



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B1119 pdf
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
2SB1119/2SD1619
Symbol
Conditions
VCE(sat) IC=()500mA, IB=()50mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
IC=()500mA, IB=()50mA
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
VCB=()10V, f=1MHz
Ratings
min typ
0.1
(0.15)
()0.85
()25
()25
()5
15
(25)
max
0.3
(0.7)
()1.2
Unit
V
V
V
V
V
V
pF
pF
No.17852/3



Part Number B1119
Description 2SB1119
Maker Sanyo - Sanyo
Total Page 3 Pages
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