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Hitachi Power Semiconductor Device Electronic Components Datasheet



B1079

2SB1079


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B1079 pdf
2SB1079
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1559
Outline
TO-3P
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
2
1
1 k
(Typ)
400
(Typ)
3



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B1079 pdf
2SB1079
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
IB
PC * 1
Tj
Tstg
Ratings
–100
–100
–7
–20
–30
–3
100
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
–100
Collector to emitter breakdown V(BRCEO
voltage
–100
Collector to emitter sustain
voltage
VCEO(sus)
–100
Emitter to base breakdown
voltage
V(BR)EBO
–7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CBO
I CEO
hFE
VCE(sat)1
1000
Base to emitter saturation
voltage
VBE(sat)1
Collector to emitter saturation VCE(sat)2
voltage
Base to emitter saturation
voltage
VBE(sat)2
Turn on time
Storage time
Note: 1. Pulse Test.
ton
tstg
Typ
0.6
3.5
Max Unit
—V
—V
—V
—V
–100 µA
–1.0 mA
20000
–2.0 V
–2.5 V
–3.0 V
–3.5 V
µs
µs
Test conditions
IC = –0.1 mA, IE = 0
IC = –25 mA, RBE =
IC = –200 mA, RBE = *1
IE = –50 mA, IC = 0
VCB = –100 V, IE = 0
VCE = –80 V, RBE =
VCE = –3 V, IC = –10 A*1
IC = –10 A, IB = –20 mA*1
IC = –20 A, IB = –200 mA*1
IC = –10 A, IB1 = –IB2 = –20 mA
2



Part Number B1079
Description 2SB1079
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 6 Pages
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