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Toshiba Electronic Components Datasheet



B1015

2SB1015



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B1015 pdf
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1015A
2SB1015A
Audio Frequency Power Amplifier Applications
· Low collector saturation voltage: VCE (sat) = −1.7 V (max)
(IC = 3 A, IB = 0.3 A)
· Collector power dissipation: PC = 25 W (Tc = 25°C)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
-60
-60
-7
-3
-0.5
2.0
25
150
-55~150
Unit
V
V
V
A
A
W
°C
°C
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
1 2003-02-04



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B1015 pdf
2SB1015A
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = -60 V, IE = 0
IEBO
VEB = -7 V, IC = 0
V (BR) CEO IC = -50 mA, IB = 0
hFE (1)
(Note)
VCE = -5 V, IC = -0.5 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = -5 V, IC = -3 A
IC = -3 A, IB = -0.3 A
VCE = -5 A, IC = -0.5 A
VCE = -5 V, IC = -0.5 A
VCB = -10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
¾ ¾ -100 mA
¾ ¾ -100 mA
-60 ¾
¾
V
60 ¾ 200
20 ¾ ¾
¾ -0.5 -1.7
V
¾ -0.7 -1.0
V
¾ 9 ¾ MHz
¾ 150 ¾
pF
Turn-on time
ton
20 ms
Input IB1
Output
¾
0.4
¾
Switching time Storage time
Fall time
tstg IB2
VCC = -30 V
tf
-IB1 = IB2 = 0.2 A, duty cycle <= 1%
¾ 1.7 ¾ ms
¾ 0.5 ¾
Note: hFE (1) classification O: 60~120, Y: 100~200
Marking
B1015A
hFE classification (O/Y)
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2 2003-02-04



Part Number B1015
Description 2SB1015
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 4 Pages
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