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Hitachi Power Semiconductor Device Electronic Components Datasheet



B1012

2SB1012


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B1012 pdf
2SB1012(K)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD1376(K)
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
2
3
5 k
(Typ)
1 k
(Typ)
1
ID
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B1012 pdf
2SB1012(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
ID*1
Rating
–120
–120
–7
–1.5
–3.0
20
150
–55 to +150
1.5
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
–120
Emitter to base breakdown
voltage
V(BR)EBO
–7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note: 1. Pulse test
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
t on
t off
2000
Typ
0.5
2.0
Max Unit
—V
—V
–100 µA
–10 µA
30000
–1.5 V
–2.0 V
–2.0 V
–2.5 V
3.0 V
µs
µs
Test conditions
IC = –10 mA, RBE =
IE = –50 mA, IC = 0
VCB = –120 V, IE = 0
VCE = –100 V, RBE =
VCE = –3 V, IC = –1 A*1
IC = –1 A, IB = –1 mA*1
IC = –1.5 A, IB = –1.5 mA*1
IC = –1 A, IB = –1 mA*1
IC = –1.5 A, IB = –1.5 mA*1
ID = 1.5 A*1
IC = –1 A, IB1 = –IB2 = –1 mA
2



Part Number B1012
Description 2SB1012
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 6 Pages
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