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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


B0530WS

SMD Schottky Barrier Diode



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B0530WS pdf
B0530WS
Taiwan Semiconductor
Small Signal Product
200mW, Low VF SMD Schottky Barrier Diode
FEATURES
- Fast switching device(trr<4.0nS)
- Surface mount device type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: Flat lead SOD-323 small outline plastic package
- Terminal : Matte tin plated, lead free,
solderable per MIL-STD-202, method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight : 4.85 ± 0.5 mg
SOD-323F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak Repetitive Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance form Junction to Ambient
Junction Temperature
Storage Temperature Range
VRRM
IO
IFSM
PD
RthjA
TJ
TSTG
30
500
5
200
426
125
- 65 to + 125
UNIT
V
mA
A
mW
oC/W
oC
oC
PARAMETER
Reverse Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Junction Capacitance
TEST CONDITION
at IR = 500µA
at VR = 15 V
at VR = 20 V
at VR = 30 V
at IF = 100mA
at IF = 500mA
VR=0, f=1.0MHz
SYMBOL
V(BR)
IR
VF
CJ
MIN
30
--
--
--
--
MAX
80
100
500
0.36
0.47
58
UNIT
V
µA
V
pF
Document Number: DS_S1405006
Version: G14



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B0530WS pdf
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
Fig. 1 Typical Forward Characteristics
10
1
0.1
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Volatge (V)
Fig. 3 Admissible Power Dissipation Curve
250
200
150
100
50
0
0 25 50 75 100 125 150
Ambient Temperature (°C)
Fig. 5 Typical Reverse Characteristics
100
10
1
0.1
0.01
0
10 20
Reverse Voltage (V)
Document Number: DS_S1405006
30
B0530WS
Taiwan Semiconductor
Fig. 2 Forward Current Derating Curve
1
0.75
0.5
0.25
0
0
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150
Terminal Temperature (°C)
Fig. 4 Typical Junction Capacitance
5 10 15 20
Reverse Voltage (V)
25
Version: G14



Part Number B0530WS
Description SMD Schottky Barrier Diode
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 5 Pages
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