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Catalyst Semiconductor
Catalyst Semiconductor


93HC46

CAT93HC46



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93HC46 pdf
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CAT93HC46
1K-Bit High Speed Microwire Serial EEPROM
FEATURES
s High speed operation:
– 93HC46: 3MHz
s Low power CMOS technology
s 1.8 to 6.0 volt operation
s Selectable x8 or x16 memory organization
s Self-timed write cycle with auto-clear
s Sequential Read
s Software write protection
s Power-up inadvertent write protection
s 1,000,000 program/erase cycles
s 100 year data retention
s Commercial, industrial and automotive
temperature ranges
DESCRIPTION
The CAT93HC46 is a 1K-bit Serial EEPROM memory
devices which is configured as either registers of 16 bits
(ORG pin at VCC) or 8 bits (ORG pin at GND). Each
register can be written (or read) serially by using the DI
(or DO) pin. The CAT93HC46 is manufactured using
Catalyst’s advanced CMOS EEPROM floating gate
technology. The device is designed to endure 1,000,000
program/erase cycles and has a data retention of 100
years. The CAT93HC46 is available in 8-pin DIP, 8-pin
SOIC or 8-pin TSSOP packages.
PIN CONFIGURATION
DIP Package (P)
CS 1
SK 2
DI 3
DO 4
8 VCC
7 NC
6 ORG
5 GND
SOIC Package (J) SOIC Package (S)
TSSOP Package (U)
NC
VCC
CS
SK
1
2
3
4
8 ORG CS 1
7 GND SK 2
6 DO
DI 3
5 DI
DO 4
8 VCC
7 NC
6 ORG
CS
SK
DI
5 GND DO
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
PIN FUNCTIONS
Pin Name
Function
CS Chip Select
SK Clock Input
DI Serial Data Input
DO Serial Data Output
VCC
GND
+1.8 to 6.0V Power Supply
Ground
ORG
Memory Organization
NC No Connection
PE* Program Enable
Note: When the ORG pin is connected to VCC, the X16
organization is selected. When it is connected to ground,
the X8 pin is selected. If the ORG pin is left unconnected,
then an internal pullup device will select the X16
organization.
BLOCK DIAGRAM
VCC
GND
ORG
MEMORY ARRAY
ORGANIZATION
DATA
REGISTER
DI
MODE DECODE
CS LOGIC
CLOCK
SK GENERATOR
© 2002 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
ADDRESS
DECODER
OUTPUT
BUFFER
DO
93C46/56/57/66/86 F02
Doc. No. 1008,Rev. C



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93HC46 pdf
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ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. 55°C to +125°C
Storage Temperature ....................... 65°C to +150°C
Voltage on any Pin with
Respect to Ground(1) ............ 2.0V to +VCC +2.0V
VCC with Respect to Ground ............... 2.0V to +7.0V
Package Power Dissipation
Capability (TA = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(2) ........................ 100 mA
RELIABILITY CHARACTERISTICS
*COMMENT
Stresses above those listed under Absolute Maximum
Ratingsmay cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
Symbol
NEND(3)
TDR(3)
VZAP(3)
ILTH(3)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min.
1,000,000
100
2000
100
Max.
Units
Cycles/Byte
Years
Volts
mA
Reference Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
(Over recommended operating conditions, unless otherwise specified.)
Limits
Symbol
Parameter
Min.
Typ.
Max.
Units
Test Conditions
ICC1 Power Supply Current
(Operating Write)
3 mA fSK = 3MHz
VCC = 5.0V
ICC2 Power Supply Current
(Operating Read)
ISB1 Power Supply Current
(Standby) (x8 Mode)
500 µA fSK = 3MHz
VCC = 5.0V
10 µA CS = 0V
ORG=GND
ISB2(5)
ILI
Power Supply Current
(Standby) (x16Mode)
Input Leakage Current
(Including ORG pin)
0 µA CS=0V
ORG=Float or VCC
1 µA VIN = 0V to VCC
ILO Output Leakage Current
(Including ORG pin)
1 µA VOUT = 0V to VCC,
CS = 0V
VIL1
VIH1
VIL2
VIH2
VOL1
VOH1
VOL2
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
-0.1
2
0
VCC x 0.7
2.4
0.8
VCC + 1
VCC x 0.2
VCC + 1
0.4
0.2
V 4.5V VCC < 5.5V
V 4.5V VCC < 5.5V
V 1.8V VCC < 4.5V
V 1.8V VCC < 4.5V
V
4.5V VCC < 5.5V,
IOL=2.1mA
V 4.5V VCC < 5.5V,
IOH = -400mA
V 1.8V VCC < 4.5V, IOL=1mA
VOH2
Output High Voltage
VCC-0.2
1.8V VCC < 4.5V,
IOH = -100µA
Note:
(1) The minimum DC input voltage is 0.5V. During transitions, inputs may undershoot to 2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from 1V to VCC +1V.
(5) Standby Current (ISB2)=0µA (<900nA).
Doc. No. 1008, Rev. C
2



Part Number 93HC46
Description CAT93HC46
Maker Catalyst Semiconductor - Catalyst Semiconductor
Total Page 10 Pages
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