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STMicroelectronics Electronic Components Datasheet


93CS46

1K 64 x 16 SERIAL MICROWIRE EEPROM



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93CS46 pdf
ST93CS46
ST93CS47
1K (64 x 16) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE
www.DataSheet43UV.ctoom5.5V for the ST93CS46
– 2.5V to 5.5V for the ST93CS47
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 WORDS)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93CS46 and ST93CS47 are replaced by
the M93S46
8
1
PSDIP8 (B)
0.4mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
The ST93CS46 and ST93CS47 are 1K bit Electri-
cally Erasable Programmable Memory (EEPROM)
fabricated with SGS-THOMSON’s High Endurance
Single Polysilicon CMOS technology. The memory
is accessed through a serial input D and output Q.
The 1K bit memory is organized as 64 x 16 bit
words.The memory is accessed by a set of instruc-
tions which include Read, Write, Page Write, Write
All and instructions used to set the memory protec-
tion. A Read instruction loads the address of the
first word to be read into an internal address
pointer.
Table 1. Signal Names
S Chip Select Input
D Serial Data Input
Q Serial Data Output
C Serial Clock
PRE
W
Protect Enable
Write Enable
VCC Supply Voltage
VSS Ground
D
C
S
PRE
W
VCC
ST93CS46
ST93CS47
VSS
Q
AI00884B
June 1997
This is information on a product still in production bu t not recommended for new de signs.
1/16



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93CS46 pdf
ST93CS46, ST93CS47
Figure 2A. DIP Pin Connections
ST93CS46
ST93CS47
S1
C2
8 VCC
7 PRE
D3
6W
Q4
5 VSS
AI00885B
Figure 2B. SO Pin Connections
ST93CS46
ST93CS47
S1
C2
8 VCC
7 PRE
D3
6W
Q4
5 VSS
AI00886C
www.DataSThaebetl4eU2.c.omAbsolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA Ambient Operating Temperature
–40 to 85
°C
TSTG Storage Temperature
–65 to 150
°C
TLEAD Lead Temperature, Soldering
(SO8 package)
(PSDIP8 package)
40 sec
10 sec
215
260
°C
VIO Input or Output Voltages (Q = VOH or Hi-Z)
–0.3 to VCC +0.5
V
VCC Supply Voltage
–0.3 to 6.5
V
VESD
Electrostatic Discharge Voltage (Human Body model) (2)
Electrostatic Discharge Voltage (Machine model) (3)
3000
500
V
V
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500 ).
3. EIAJ IC-121 (Condition C) (200pF, 0 ).
DESCRIPTION (cont’d)
The data is then clocked out serially. The address
pointer is automatically incremented after the data
is output and, if the Chip Select input (S) is held
High, the ST93CS46/47 can output a sequential
stream of data words. In this way, the memory can
be read as a data stream of 16 to 1024 bits, or
continuously as the address counter automatically
rolls over to 00 when the highest address is
reached. Within the time required by a program-
ming cycle (tW), up to 4 words may be written with
the help of the Page Write instruction; the whole
memory may also be erased, or set to a predeter-
mined pattern, by using the Write All instruction.
Within the memory, an user defined area may be
protected against further Write instructions. The
size of this area is defined by the content of a
2/16
Protect Register, located outside of the memory
array. As a final protection step, data may be per-
manently protected by programming a One Time
Programing bit (OTP bit) which locks the Protect
Register content.
Programming is internally self-timed (the external
clock signal on C input may be disconnected or left
running after the start of a Write cycle) and does
not require an erase cycle prior to the Write instruc-
tion. The Write instruction writes 16 bits at one time
into one of the 64 words, the Page Write instruction
writes up to 4 words of 16 bits to sequential loca-
tions, assuming in both cases that all addresses
are outside the Write Protected area.
After the start of the programming cycle, a
Ready/Busy signal is available on the Data output
(Q) when the Chip Select (S) input pin is driven
High.



Part Number 93CS46
Description 1K 64 x 16 SERIAL MICROWIRE EEPROM
Maker STMicroelectronics - STMicroelectronics
Total Page 16 Pages
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