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STMicroelectronics Electronic Components Datasheet


93C46CB3

ST93C46CB


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93C46CB3 pdf
ST93C46A,46C,46T
ST93C47C,47T
www.datasheet4u.com
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
DUAL ORGANIZATION: 64 x 16 or 128 x 8
BYTE/WORD and ENTIRE MEMORY
PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with
mAUTO-ERASE
oREADY/BUSY SIGNAL DURING
PROGRAMMING
.cSINGLE SUPPLY VOLTAGE:
– 4.5V to 5.5V for ST93C46 version
– 3V to 5.5V for ST93C47 version
USEQUENTIAL READ OPERATION
t45ms TYPICAL PROGRAMMING TIME
ENHANCED ESD/LATCH UP
ePERFORMANCE for ”C” VERSION
ST93C46A, ST93C46C, ST93C46T,
eST93C47C, ST93C47T are replaced by the
M93C46
8
1
PSDIP8 (B)
0.4mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
hDESCRIPTION
SThis specification covers a range of 1K bit serial
taEEPROM products, the ST93C46A,46C,46T
specified at 5V±10% and the ST93C47C,47T
specified at 3V to 5.5V.
aIn the text, products are referred to as ST93C46.
The ST93C46 is a 1K bit Electrically Erasable
.DProgrammableMemory (EEPROM) fabricated with
SGS-THOMSON’s High EnduranceSingle Polysili-
con CMOS technology. The memory is accessed
wthrough a serial input (D) and output (Q).
wTable 1. Signal Names
wS Chip Select Input
D
C
S
ORG
VCC
ST93C46
ST93C47
Q
D
Q
C
ORG
VCC
VSS
Serial Data Input
Serial Data Output
Serial Clock
Organisation Select
Supply Voltage
Ground
June 1997
This is information on a product still in production bu t not recommended for new de signs.
wwVSwS .DataSheAIe008t714C 1U/13.com



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93C46CB3 pdf
ST93C46A/46C/46T, ST93C47C/47T
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
www.datasheet4TuA.com Ambient Operating Temperature
Value
–40 to 125
Unit
°C
TSTG Storage Temperature
–65 to 150
°C
TLEAD Lead Temperature, Soldering
(SO8 package)
(PSDIP8 package)
40 sec
10 sec
215
260
°C
VIO Input or Output Voltages (Q = VOH or Hi-Z)
–0.3 to VCC +0.5
V
VCC
VESD
Supply Voltage
Electrostatic Discharge Voltage (Human Body model) (2)
Electrostatic Discharge Voltage (Machine model) (3)
ST93C46A,T
ST93C46C
ST93C46
–0.3 to 6.5
2000
4000
500
V
V
V
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500 ).
3. EIAJ IC-121 (Condition C) (200pF, 0 ).
Figure 2A. DIP Pin Connections
Figure 2B. SO Pin Connections
ST93C46
ST93C47
S1
C2
8 VCC
7 DU
D3
6 ORG
Q4
5 VSS
AI00872C
Warning: DU = Don’t Use
Figure 2C. SO, 90° Turn, Pin Connections
DU
VCC
S
C
ST93C46T
ST93C47T
18
27
36
45
AI00982B
ORG
VSS
Q
D
Warning: DU = Don’t Use
2/13
ST93C46
ST93C47
S1
C2
8 VCC
7 DU
D3
6 ORG
Q4
5 VSS
AI00874C
Warning: DU = Don’t Use
DESCRIPTION (cont’d)
The 1K bit memory is divided into either 128 x 8 bit
bytes or 64 x 16 bit words. The organization may
be selected by a signal on the ORG input. The
memory is accessed by a set of instructions which
includes Read a byte/word, Write a byte/word,
Erase a byte/word, Erase All and Write All.
A Read instruction loads the address of the first
byte/word to be read into an internal address
pointer. The data is then clocked out serially.
The address pointer is automatically incremented
after the data is output and, if the Chip Select input
(S) is held High, the ST93C46 can output a sequen-
tial stream of data bytes/words. In this way, the
memory can be read as a data stream from 8 to
1024 bits long, or continuously as the address



Part Number 93C46CB3
Description ST93C46CB
Maker ST Microelectronics - ST Microelectronics
Total Page 13 Pages
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