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  Microchip Technology Semiconductor Electronic Components Datasheet  


93C06

256 Bit/1K 5.0V CMOS Serial EEPROM



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93C06 pdf
93C06/46
256 Bit/1K 5.0V CMOS Serial EEPROM
FEATURES
• Low power CMOS technology
• 16 bit memory organization
- 6 x 16 bit organization (93C06)
- 64 x 16 bit organization (93C46)
• Single 5 volt only operation
• Self-timed ERASE and WRITE cycles
• Automatic ERASE before WRITE
• Power on/off data protection circuitry
• 1,000,000 ERASE/WRITE cycles guaranteed
• Data Retention > 200 years
• 8-pin DIP or SOIC package
• Available for extended temperature ranges:
- Commercial: 0˚C to +70˚C
- Industrial: -40˚C to +85˚C
- Automotive: -40˚C to +125˚C
• 2 ms program cycle time
DESCRIPTION
The Microchip Technology Inc. 93C06/46 family of
Serial Electrically Erasable PROMs are configured in a
x16 organization. Advanced CMOS technology makes
these devices ideal for low-power non-volatile memory
applications. The 93C06/46 is available in the standard
8-pin DIP and surface mount SOIC packages. The
93C46X comes as SOIC only.
These devices offer fast (1 ms) byte write and extended
(-40˚C to +125˚C) temperature operation. It is recom-
mended that all other applications use Microchip’s
93LC46.
PACKAGE TYPE
DIP
CS 1
8 VCC
CLK 2 93C06 7 NC
93C46
DI 3
6 NC
DO 4
5 VSS
SOIC
CS
CLK
DI
DO
18
27
93C06
3 93C46 6
45
VCC
NC
NC
VSS
NC
VCC
CS
CLK
18
27
93C46X
36
45
NC
VSS
DO
DI
BLOCK DIAGRAM
VCC
VSS
MEMORY
ARRAY
ADDRESS
DECODER
DATA REGISTER
DI
MODE
DECODE
CS LOGIC
CLOCK
CLK
GENERATOR
OUTPUT
BUFFER
DO
© 1995 Microchip Technology Inc.
DS11179C-page 1



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93C06 pdf
93C06/46
1.0 ELECTRICAL CHARACTERISTICS
1.1 Maximum Ratings*
VCC ............................................................................ 7.0V
All inputs and outputs w.r.t. VSS......... -0.6V to VCC +1.0V
Storage temperature................................-65˚C to +150˚C
Ambient temperature with power applied . -65˚C to +125C
Soldering temperature of leads (10 seconds)........+300˚C
ESD protection on all pins ......................................... 4 kV
*Notice: Stresses above those listed under “Maximum ratings”
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operational listings
of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
TABLE 1-1:
Name
CS
CLK
DI
DO
VSS
NC
VCC
PIN FUNCTION TABLE
Function
Chip Select
Serial Clock
Data In
Data Out
Ground
No Connect; No Internal
Connection
+5V Power Supply
TABLE 1-2: DC CHARACTERISTICS
VCC = +5V (±10%)
Commercial:
Industrial:
Automotive:
Tamb = 0˚C to +70˚C
Tamb = -40˚C to +85˚C
Tamb = -40˚C to +125˚C (Note 3)
Parameter
Symbol
Min Max Units
Conditions
VCC detector threshold
VTH
2.8 4.5
V
High level input voltage
VIH 2.0 VCC + 1 V
Low level input voltage
VIL
-0.3 0.8
V
High level output voltage
VOH
2.4 —
V IOH = -400 µA
Low level output voltage
VOL — 0.4 V IOL = 3.2 mA
Input leakage current
ILI — 10 µA VIN = 0V to VCC (Note 1)
Output leakage current
ILO — 10 µA VOUT = 0V to VCC (Note 1)
Pin capacitance
(all inputs/outputs)
CIN, COUT
7
pF VIN/VOUT = 0V (Note 2)
Tamb = +25˚C, f = 1 MHz
Operating current (all modes)
ICC write
4 mA FCLK = 1 MHz, VCC = 5.5V
Standby current
ICCS
— 100 µA CS = 0V, VCC = 5.5V
Note 1: Internal resistor pull-up at Pin 6.
Note 2: This parameter is periodically sampled and not 100% tested.
Note 3: For operation above 85˚C, endurance is rated at 10,000 ERASE/WRITE cycles.
FIGURE 1-1: SYNCHRONOUS DATA TIMING
TCKH
TCKL
TCSH
CLK
TDIS
DI
VALID
CS TCSS
TDIH
TDIS
TDIH
VALID
TCSL
TPD TPD TCZ
HIGH
DO
VALID
VALID
Z
DS11179C-page 2
© 1995 Microchip Technology Inc.



Part Number 93C06
Description 256 Bit/1K 5.0V CMOS Serial EEPROM
Maker Microchip Technology - Microchip Technology
Total Page 8 Pages
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