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International Rectifier Electronic Components Datasheet



90N20DPBF

IRFP90N20DPBF



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SMPS MOSFET
PD - 95664
IRFP90N20DPbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
200V
RDS(on) max
0.023
ID
94Ao
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
94o
66
380
580
3.8
± 30
6.7
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
0.24
–––
Max.
0.26
–––
40
Units
°C/W
Notes  through o are on page 8
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7/30/04



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IRFP90N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
200
–––
–––
3.0
–––
–––
–––
–––
––– ––– V
0.24 ––– V/°C
––– 0.023
––– 5.0 V
––– 25 µA
––– 250
––– 100
nA
––– -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 56A „
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs Forward Transconductance
39 ––– –––
Qg Total Gate Charge
––– 180 270
Qgs Gate-to-Source Charge
––– 45 67
Qgd Gate-to-Drain ("Miller") Charge
––– 87 130
td(on)
Turn-On Delay Time
––– 23 –––
tr Rise Time
––– 160 –––
td(off)
Turn-Off Delay Time
––– 43 –––
tf Fall Time
––– 79 –––
Ciss Input Capacitance
––– 6040 –––
Coss
Output Capacitance
––– 1070 –––
Crss Reverse Transfer Capacitance
––– 170 –––
Coss
Output Capacitance
––– 8350 –––
Coss
Output Capacitance
––– 420 –––
Coss eff. Effective Output Capacitance
––– 870 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 56A
ID = 56A
VDS = 160V
VGS = 10V, „
VDD = 100V
ID = 56A
RG = 1.2
VGS = 10V
VGS = 0V
„
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V …
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
1010
56
58
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 94o
A
MOSFET symbol
showing the
––– ––– 380
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 56A, VGS = 0V „
––– 230 340 ns TJ = 25°C, IF = 56A
––– 1.9 2.8 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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Part Number 90N20DPBF
Description IRFP90N20DPBF
Maker International Rectifier - International Rectifier
Total Page 8 Pages
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