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IXYS Corporation
IXYS Corporation


90N20

N-channel Enhancement Mode Avalanche Rated



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90N20 pdf
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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
I
D80
I
DM
I
AR
EAR
dv/dt
PD
T
J
TJM
Tstg
TL
VISOL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C, Chip capability
T
C
= 80°C, limited by external leads
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque
Terminal connection torque
IXFK 90 N 20
IXFN 100 N 20
IXFN 106 N 20
Maximum Ratings
IXFK
IXFN IXFN
90N20 100N20 106N20
200 200 200 V
200 200 200 V
±20 ±20 20 V
±30 ±30 20 V
90 
76
360
50
100 106 A
-A
400 424 A
50 A
30 30 30 mJ
5 5 5 V/ns
500 520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 - °C
- 2500
- 3000
V~
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10 30 g
Symbol
VDSS
VGH(th)
IGSS
IDSS
R
DS(on)
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
V = 10 V, I = 0.5 • I
GS D D25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
200
2
TJ = 25°C
TJ = 125°C
V
4V
±200 nA
400 mA
2 mA
IXFK90N20
IXFN100N20
IXFN106N20
0.023
0.023
0.020
W
W
W
V
DSS
I
D25
200 V 90 A
200 V 100 A
200 V 106 A
trr £ 200 ns
TO-264 AA
TO-264 AA (IXFK)
R
DS(on)
23 mW
23 mW
20 mW
G
D
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
DG
(TAB)
G
S
S
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l International standard packages
q JEDEC TO-264 AA, epoxy meet
UL94V-0, flammability classification
q miniBLOC with Aluminium nitride
isolation
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Synchronous rectification
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q Temperature and lighting controls
q Low voltage relays
Advantages
q Easy to mount
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92804H (7/97)
1-4



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IXFK100N20 IXFN90N20 IXFN106N20
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
TO-264 AA
TO-264 AA
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
60 S
9000
1600
590
pF
pF
pF
30 ns
80 ns
75 ns
30 ns
380 nC
70 nC
190 nC
0.25 K/W
0.15 K/W
0.24 K/W
0.05 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
IXFK90N20
IXFN100N20
IXFN106N20
IXFK90N20
ISM Repetitive;
IXFN100N20
pulse width limited by TJM IXFN106N20
V I = 100 A, V = 0 V,
SD F GS
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
QRM IF = 50 A, -di/dt = 100 A/ms, VR = 100 V
IRM
90 A
100 A
106 A
360 A
424 A
1.5 V
200 ns
3 mC
38 A
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4



Part Number 90N20
Description N-channel Enhancement Mode Avalanche Rated
Maker IXYS Corporation - IXYS Corporation
Total Page 4 Pages
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