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Shanghai SIM-BCD Semiconductor
Shanghai SIM-BCD Semiconductor


9018

Silicon NPN Epitaxial Transistor



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9018 pdf
9018
9018 Silicon NPN Epitaxial Transistor
Description :The 9018 is designed for UHF general amplifier applications
Features: Excellent hFE Linearity
Excellent fT characteristic
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Size
Front Metal
Backside Metal
Scribe line width
Wafer Size
Base
Emitter
360um×360um
210±20um
φ65um
φ65um
AlSiCu
Au (As)
50um
6 inch
Electrical Characteristics( Ta=25)
Characteristic
Symbol
Test Condition
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
ICBO
IEBO
BVCBO
BVCEO
BVEBO
hFE
VCB=20V, IE=0
VEB=3V, IC=0
IC=0.1mA
IC=1mA
IE=0.1mA
VCE=5V, IC=1mA
Min Max
0.1
0.1
30
20
5
60 200
Collector Saturation Voltage
VCE(sat) IC=10mA,IB=1mA
0.3
Unit
uA
uA
V
V
V
V
May.2004
Version :0.0
Page 1 of 1



Part Number 9018
Description Silicon NPN Epitaxial Transistor
Maker Shanghai SIM-BCD Semiconductor - Shanghai SIM-BCD Semiconductor
Total Page 1 Pages
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