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FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET


9015M

Silicon PNP transistor



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9015M pdf
9015M
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.

特征 / Features
PC 大,hFE 高且特性好,与 9014M 互补。
Hig PC and IC, excellent hFE linearity, complementary pair with 9014M.

用途 / Applications
用于低电平、低噪声的前置放大器。
low frequency, low noise pre-amplifier.

内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1Emitter
PIN 2Base PIN 3Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
A
60150
B
100300
Marking
HM6A
HM6B
C
200600
HM6C
D
4001000
HM6D
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No Preview Available !

9015M pdf
9015M
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
-50
-45
-5.0
-100
400
150
-55150
单位
Unit
V
V
V
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
符号
Symbol
测试条件
Test Conditions
VCBO IC=-0.1mA IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-50 V
VCEO IC=-1.0mA IB=0
-45
V
VEBO IE=-0.1mA IC=0
-5.0
V
ICBO VCB=-50V IE=0
IEBO VEB=-5.0V IC=0
hFE VCE=-5.0V IC=-1.0mA 60
-0.05
-0.05
600
μA
μA
VCE(sat) IC=-100mA IB=-5.0mA
-0.2 -0.7 V
VBE(sat) IC=-100mA IB=-5.0mA
-0.82 -1.0 V
VBE VCE=-5.0V IC=-2.0mA
-0.65 -0.75 V
fT VCE=-5.0V IC=-10mA 100
Cob
VCB=-10V IE=0
f=1.0MHz
VCE=-5.0V IC=-0.2mA
NF Rg=2.0Kf=1.0KHz
Δf=200Hz
190
4.5
0.7
MHz
7.0 pF
10 dB
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Part Number 9015M
Description Silicon PNP transistor
Maker FOSHAN BLUE ROCKET - FOSHAN BLUE ROCKET
Total Page 6 Pages
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9015M pdf
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