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FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET


9014W

Silicon NPN transistor



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9014W pdf
9014W(BR3DG9014W)
Rev.C Feb.-2015
DATA SHEET
描述 / Descriptions
SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package.
特征 / Features
PC 大,hFE 高且特性好,与 9015W(BR3CG9015W)互补。
High PC and hFE, excellent hFE linearity, complementary pair with 9015W(BR3CG9015W).
用途 / Applications
用于低电平、低噪声的前置放大器。
Low frequency, low noise pre-amplifier.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
21
PIN1Emitter
PIN 2Base PIN 3Collector
印章代码 / Marking
hFE Classifications
Symbol
hFE Range
Marking
A
60150
HJ6A
B
100300
HJ6B
C
200600
HJ6C
D
4001000
HJ6D
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9014W pdf
9014W(BR3DG9014W)
Rev.C Feb.-2015
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
50
45
5.0
100
250
150
-55150
单位
Unit
V
V
V
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
VCBO
VCEO
IC=0.1mA
IC=1.0mA
IE=0
IB=0
Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=50V
IE=0
Emitter Base Cut-Off Current
IEBO VEB=5.0V IC=0
DC Current Gain
hFE VCE=5.0V IC=1.0mA
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA IB=5.0mA
Base-Emitter Saturation Voltage
VBE(sat) IC=100mA IB=5.0mA
Collector-Emitter Voltage
VBE VCE=5.0V IC=2.0mA
Transition Frequency
Output Capacitance
fT VCE=5.0V IC=10mA
Cob
VCB=10V
f=1.0MHz
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
50 V
45 V
5.0 V
0.05 μA
0.05 μA
60 1000
0.14 0.3 V
0.84 1.0 V
0.63 0.7 V
150 270
MHz
2.2 3.5 pF
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Part Number 9014W
Description Silicon NPN transistor
Maker FOSHAN BLUE ROCKET - FOSHAN BLUE ROCKET
Total Page 6 Pages
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