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FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET


9014M

SILICON NPN TRANSISTOR



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9014M pdf
9014M
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.

特征 / Features
PC 大,hFE 高且特性好,与 9015M 互补。
High PC and hFE, excellent hFE linearity, complementary pair with 9015M.

用途 / Applications
用于低电平、低噪声的前置放大器。
low frequency, low noise pre-amplifier.

内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1Emitter
PIN 2Base PIN 3Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
A
60150
B
100300
C
200600
Marking
HJ6A
HJ6B
HJ6C
D
4001000
HJ6D
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No Preview Available !

9014M pdf
9014M
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
50
45
5.0
100
400
150
-55150
单位
Unit
V
V
V
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
符号
Symbol
测试条件
Test Conditions
VCBO IC=0.1mA IE=0
VCEO IC=1.0mA IB=0
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE
fT
Cob
NF
IE=0.1mA
VCB=50V
VEB=5.0V
VCE=5.0V
IC=100mA
IC=100mA
VCE=5.0V
VCE=5.0V
VCB=10V
f=1.0MHz
VCE=5.0V
Rg=2.0K
Δf=200Hz
IC=0
IE=0
IC=0
IC=1.0mA
IB=5.0mA
IB=5.0mA
IC=2.0mA
IC=10mA
IE=0
IC=0.2mA
f=1.0KHz
最小值 典型值 最大值 单位
Min Typ Max Unit
50 V
45 V
5.0 V
0.05 μA
0.05 μA
60 1000
0.14 0.3 V
0.84
0.63
150 270
1.0 V
0.7 V
MHz
2.2 3.5 pF
0.9 10 dB
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Part Number 9014M
Description SILICON NPN TRANSISTOR
Maker FOSHAN BLUE ROCKET - FOSHAN BLUE ROCKET
Total Page 6 Pages
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