http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Unisonic Technologies
Unisonic Technologies


9013

NPN SILICON EPITAXIAL TRANSISTOR



No Preview Available !

9013 pdf
UNISONIC TECHNOLOGIES CO., LTD
9013
NPN EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION
FEATURES
* High total power dissipation. (625mW)
* High collector current. (500mA)
* Excellent hFE linearity.
* Complementary to UTC 9012
1
TO-92
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
9013L-x-T92-B
9013G-x-T92-B
TO-92
9013L-x-T92-K
9013G-x-T92-K
TO-92
Note: Pin assignment: E: Emitter B: Base C: Collector
Pin Assignment
123
EBC
EBC
Packing
Tape Box
Bulk
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
1 of 3
QW-R201-030.C



No Preview Available !

9013 pdf
9013
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC 500 mA
Collector dissipation
PC 625 mW
Junction Temperature
TJ 125 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(on)
CLASSIFICATION OF hFE1
TEST CONDITIONS
IC=-100A, IE=0
IC=1mA, IB=0
IE=100A, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC=500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=1V, IC=10mA
MIN TYP MAX UNIT
40 V
20 V
5V
100 nA
100 nA
64 120
40 120 300
0.16 0.6
V
0.91 1.2
V
0.6 0.67 0.7
V
RANK
RANGE
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
I
190-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-030.C



Part Number 9013
Description NPN SILICON EPITAXIAL TRANSISTOR
Maker Unisonic Technologies - Unisonic Technologies
Total Page 3 Pages
PDF Download
9013 pdf
Download PDF File
9013 pdf
View for Mobile



Featured Datasheets

Part Number Description Manufacturers PDF
900-XC6DT2 DIESEL ENGINE-GENERATOR SET 900-XC6DT2
MTU Onsite Energy
PDF
90000 1000V CERAMIC DISC 90000
NTE Electronics
PDF
9002 NAND GATES / HEX INVERTERS 9002
ETC
PDF
9003 NAND GATES / HEX INVERTERS 9003
ETC
PDF
9004 NAND GATES / HEX INVERTERS 9004
ETC
PDF
9007 NAND GATES / HEX INVERTERS 9007
ETC
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components