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FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET


9012M

Silicon PNP transistor



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9012M pdf
9012M
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.

特征 / Features
PC 、IC 大,hFE 特性极好,与 9013M 互补。
High PC and IC, Excellent hFE linearity, complementary pair with 9013M.

用途 / Applications
用于收音机推挽功放。
Amplifier of portable radios in class B push-pull operation.

内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1Emitter
PIN 2Base PIN 3Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
D
6491
E
78112
F
96135
Marking
H2TD
H2TE
H2TF
GH
112166 144202
H2TG
H2TH
I
188276
H2TI
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No Preview Available !

9012M pdf
9012M
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
-40
-20
-5.0
-500
-100
450
150
-55150
单位
Unit
V
V
V
mA
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation
voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=-0.1mA IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-40 V
VCEO IC=-1.0mA IB=0
-20
V
VEBO IE=-0.1mA IC=0
-5.0
V
ICBO
IEBO
hFE(1)
hFE(2)
VCB=-25V
VEB=-3.0V
VCE=-1.0V
VCE=-1.0V
IE=0
IC=0
IC=-50mA
IC=-500mA
64
40
-0.1 μA
-0.1 μA
276
VCE(sat) IC=-500mA IB=-50mA
-0.18 -0.6 V
VBE(sat) IC=-500mA IB=-50mA
VBE VCE=-1.0V IC=-10mA
-0.95
-0.67
-1.2
-0.7
V
V
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Part Number 9012M
Description Silicon PNP transistor
Maker FOSHAN BLUE ROCKET - FOSHAN BLUE ROCKET
Total Page 6 Pages
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9012M pdf
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