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Unisonic Technologies
Unisonic Technologies


9012H

PNP EPITAXIAL SILICON TRANSISTOR


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9012H pdf
UTC 9012
PNP EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS B
PUSH-PULL OPERATION
FEATURES
*High total power dissipation. (625mW)
*High collector current. (-500mA)
*Excellent hFE linearity
*Complementary to UTC 9013
1
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
-40
Collector-emitter voltage
VCEO
-20
Emitter-base voltage
VEBO
-5
Collector current
Ic -500
Collector dissipation
Pc 625
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage
BVCBO
Ic=-100µA,IE=0
-40
Collector-emitter breakdown voltage BVCEO
Ic=-1mA,IB=0
-20
Emitter-base breakdown voltage
BVEBO
IE=-100µA, Ic=0
-5
Collector cutoff current
ICBO
VCB=-25V,IE=0
Emitter cutoff current
IEBO
VEB=-3V,IC=0
DC current gain
hFE1
VCE=-1V,Ic=-50mA
64
hFE2
VCE=-1V,Ic=-500mA
40
Collector-emitter saturation voltage VCE(sat)
Ic=-500mA,IB=-50mA
Base-emitter saturation voltage
VBE(sat)
Ic=-500mA,IB=-50mA
Base-emitter on voltage
VBE(on)
VCE=-1V,Ic=-10mA
-0.6
TYP
120
90
-0.18
-0.95
-0.67
MAX
-100
-100
300
-0.6
-1.2
-0.7
UNIT
V
V
V
nA
nA
V
V
V
CLASSIFICATION OF hFE1
RANK
D
E
RANGE
64-91
78-112
F
96-135
G
112-166
H
144-202
I
190-300
UTC
UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-029,A



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9012H pdf
UTC 9012
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R201-029,A



Part Number 9012H
Description PNP EPITAXIAL SILICON TRANSISTOR
Maker Unisonic Technologies - Unisonic Technologies
Total Page 2 Pages
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