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Infineon Technologies Electronic Components Datasheet


8090

LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz



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8090 pdf
PTF080901
LDMOS RF Power Field Effect Transistor
90 W, 869–960 MHz
Description
Features
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz
0 55
-10
Ef f iciency
50
-20 45
-30 40
-40 35
-50
400 kHz
-60
30
25
• Broadband internal matching
• Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P–1dB = 120 W
- Gain = 17 dB
- Efficiency = 60%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
90 W (CW) output power
-70 20
-80
600 kHz
15
-90 10
36 38 40 42 44 46 48 50
PTF080901E
Package 30248
Output Power (dBm)
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTF080901F
Package 31248
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 700 mA, POUT = 45 W, f = 959.8 MHz
Characteristic
Symbol Min Typ Max Unit
Error Vector Magnitude
EVM (RMS) —
2.5
%
Modulation Spectrum @ 400 kHz
ACPR
— –62
dBc
Modulation Spectrum @ 600 kHz
ACPR
— –74
dBc
Gain
Drain Efficiency
Gps — 18 — dB
ηD
— 40
%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 650 mA, POUT = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Gain
Drain Efficiency
Intermodulation Distortion
Gps
ηD
IMD
Data Sheet
1
Min
17
40
Typ
18
42
–32
Max
–29
Unit
dB
%
dBc
2004-04-05



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8090 pdf
PTF080901
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA
VDS = 28 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 650 mA
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
RDS(on)
VGS
IGSS
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Typical Performance (measurements taken in production test fixture)
Min Typ
65 —
——
— 0.1
2.5 3.2
——
Max
1.0
4
1.0
Value
65
–0.5 to +12
200
335
1.9
–40 to +150
0.52
Unit
V
µA
V
V
µA
Unit
V
V
°C
W
W/°C
°C
°C/W
Modulation Spectrum
POUT = 40 W, f = 959.8 MHz
2.1 -20
1.9 EVM
1.7
-30
-40
1.5 -50
400 KHz
1.3 -60
1.1 -70
0.9 600 KHz -80
0.7 -90
0.5
0.47
0.57 0.67 0.77 0.87
Quiescent Current (A)
-100
0.97
EDGE EVM Performance
VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz
9 90
8 80
7 70
6 60
5 50
Ef f icienc y
4 40
3 30
2 20
1
EV M
10
00
36 38 40 42 44 46 48 50
Output Power (dBm)
All published data at TCASE = 25°C unless otherwise indicated.
Data Sheet
2
2004-04-05



Part Number 8090
Description LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
Maker Infineon Technologies AG - Infineon Technologies AG
Total Page 10 Pages
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