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BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS


8050M

Silicon NPN transistor



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8050M pdf
8050M
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.

特征 / Features
与 8550M 互补。
Complementary pair with 8550M.

用途 / Applications
用于功率放大电路。
Power amplifier applications.

内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1Emitter
PIN 2Base PIN 3Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
B
85~160
C
120~200
Marking
HY1B
HY1C
D
160~300
HY1D
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No Preview Available !

8050M pdf
8050M
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
40
25
6
1.5
0.5
625
150
-55150
单位
Unit
V
V
V
A
A
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=0.1mA IE=0
VCEO IC=2.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IC=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=35V
IE=0
Emitter Cut-Off Current
IEBO VEB=6.0V IC=0
hFE(1) VCE=1.0V IC=100mA
DC Current Gain
hFE(2) VCE=1.0V IC=800mA
Collector to Emitter Saturation
Voltage
hFE(3) VCE=1.0V
VCE(sat) IC=800mA
IC=5.0mA
IB=80mA
Base to Emitter Voltage
VBE VCE=1.0V IC=10mA
Base to Emitter Saturation Voltage VBE(sat) IC=800mA IB=80mA
Transition Frequency
Collector output capacitance
fT IC=50mA VCE=10V
Cob
VCB=10V
f=1.0MHz
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
40 V
25 V
6.0 V
0.1 μA
0.1 μA
85 300
40
45
0.28 0.5 V
0.66 1.0 V
0.98 1.2 V
100 190
MHz
9.0 pF
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Part Number 8050M
Description Silicon NPN transistor
Maker BLUE ROCKET ELECTRONICS - BLUE ROCKET ELECTRONICS
Total Page 6 Pages
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8050M pdf
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