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Elantec Semiconductor
Elantec Semiconductor


8001401ZX

Fast Buffer Amplifier



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ELH0033G 883 8001401ZX
Fast Buffer Amplifier
Features
 Slew rate 1500 V ms
 Output drive 100 mA
 Rise and fall times 2 9 ns
 Input resistance 1011X
 Power bandwidth 100 MHz
 MIL-STD-883 devices 100%
manufactured in U S A
Advantages
 Excellent phase linearity
 Driver cables and other
capacitive loads
 Wide supply range single or split
Ordering Information
Part No
Temp Range Package Outline
ELH0033G 883B b55 C to a125 C TO-8 MDP0002
8001401ZX is the SMD version of this device
Connection Diagram
12-Pin TO-8
General Description
The ELH0033 is a high-speed FET input voltage follower buff-
er designed to provide high output currents from DC to over
100 MHz The ELH0033 slews at 1500 V ms and will drive 100X
loads Phase linearity is excellent to 20 MHz allowing the buff-
er to be included in op amp loops
The ELH0033 is intended to fulfill a wide range of buffer appli-
cations such as high-speed line drivers video impedance trans-
formation nuclear instrumentation amplifiers op amp isolation
buffers for driving reactive loads and high impedance input
buffers for high-speed A to D’s and comparators
These devices are constructed using specially selected junction
FETs and active laser trimming to achieve guaranteed perform-
ance specifications The ELH0033 is specified for operation
from b55 C to a125 C
Elantec facilities comply with MIL-I-45208A and other applica-
ble quality specifications Elantec’s Military devices are 100%
fabricated and assembled in our rigidly controlled ultra-clean
facilities in Milpitas California For additional information on
Elantec’s Quality and Reliability Assurance policy and proce-
dures request brochure QRA-1
Equivalent Schematic
Top View
Note Case is electrically isolated
0033 – 1
0033 – 2
Note All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ‘‘controlled document’’ Current revisions if any to these
specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation Patent pending
1989 Elantec Inc



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ELH0033G 883 8001401ZX
Fast Buffer Amplifier
Absolute Maximum Ratings
VS Supply Voltage (Va b Vb)
40V TA Operating Temperature Range
VIN Input Voltage
40V ELH0033
b55 C to a125 C
PD Power Dissipation (See Curves)
1 5W
TJ Operating Junction Temperature
175 C
IOC Continuous Output Current
g100 mA
TST Storage Temperature
b65 C to a150 C
IOP Peak Output Current
g250 mA
Lead Temperature
(Soldering 10 seconds)
300 C
Important Note
All parameters having Min Max specifications are guaranteed The Test Level column indicates the specific device testing actually
performed during production and Quality inspection Elantec performs most electrical tests using modern high-speed automatic test
equipment specifically the LTX77 Series system Unless otherwise noted all tests are pulsed tests therefore TJeTCeTA
Test Level
I
II
III
IV
V
Test Procedure
100% production tested and QA sample tested per QA test plan QCX0002
100% production tested at TA e 25 C and QA sample tested at TA e 25 C
TMAX and TMIN per QA test plan QCX0002
QA sample tested per QA test plan QCX0002
Parameter is guaranteed (but not tested) by Design and Characterization Data
Parameter is typical value at TA e 25 C for information purposes only
DC Electrical Characteristics VS e g15V VIN e 0V TMIN s TA s TMAX
Parameter
Description
Test Conditions
Min
ELH0033
Typ
Max
Test
Level
Units
VOS
DVOS DT
Output Offset
Voltage
Average Temperature
Coefficient of
Offset Voltage
RS s 100 kX
TJ e 25 C (Note 1)
RS s 100 kX
RS e 100X
5 10
15
50
I mV
I mV
V mV C
IB
Input Bias Current
TJ e 25 C (Note 1)
250 I
pA
TA e 25 C (Note 2)
2 5 IV
nA
TJ e TA e TMAX
10 I
nA
AV
Voltage Gain
RS e 100X RL e 1 kX
VIN e g10V
0 97 0 98 1 00
I
VV
RIN
Input Impedance
RL e 1 kX
1010
1011
IV X
TJ e 25 C (Note 1)
RL e 1 kX
1010
1011
IX
RO
Output Impedance
RL e 1 kX VIN e g1V
6 10
I
X
VO
Output Voltage
VIN e g14V
Swing
RL e 1 kX
g12
IV
VIN e g10 5V
RL e 100X TA e 25 C
g9
IV
IS Supply Current
14 5 20
22
I
mA
Power Consumption
600 660
I
mW
Note 1 Specification is at 25 C junction temperature due to requirements of high-speed automatic testing Actual values at operating
temperature will exceed the value at TJ e 25 C When supply voltages are g15V no-load operating junction temperature
may rise 40 C – 60 C above ambient and more under load conditions Accordingly VOS may change one to several mV and IB
will change significantly during warm-up Refer to IB vs temperature graph for expected values
Note 2 Measured in still air 7 minutes after application of power
2



Part Number 8001401ZX
Description Fast Buffer Amplifier
Maker Elantec Semiconductor - Elantec Semiconductor
Total Page 12 Pages
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