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National Semiconductor Electronic Components Datasheet


74F10

Triple 3-Input NAND Gate



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74F10 pdf
54F 74F10
Triple 3-Input NAND Gate
General Description
This device contains three independent gates each of
which performs the logic NAND function
December 1994
Commercial
74F10PC
74F10SC (Note 1)
74F10SJ (Note 1)
Military
54F10DM (Note 2)
54F10FM (Note 2)
54F10LM (Note 2)
Package
Number
N14A
J14A
M14A
M14D
W14B
E20A
Package Description
14-Lead (0 300 Wide) Molded Dual-In-Line
14-Lead Ceramic Dual-In-Line
14-Lead (0 150 Wide) Molded Small Outline JEDEC
14-Lead (0 300 Wide) Molded Small Outline EIAJ
14-Lead Cerpack
20-Lead Ceramic Leadless Chip Carrier Type C
Note 1 Devices also available in 13 reel Use suffix e SCX and SJX
Note 2 Military grade device with environmental and burn-in processing Use suffix e DMQB FMQB and LMQB
Logic Symbol
Connection Diagrams
IEEE IEC
Pin Assignment for
DIP SOIC and Flatpak
Pin Assignment
for LCC
TL F 9458–3
TL F 9458 – 2
Unit Loading Fan Out
Pin Names
An Bn Cn
On
Description
Inputs
Outputs
54F 74F
UL
HIGH LOW
10 10
50 33 3
Input IIH IIL
Output IOH IOL
20 mA b0 6 mA
b1 mA 20 mA
FAST and TRI-STATE are registered trademarks of National Semiconductor Corporation
C1995 National Semiconductor Corporation TL F 9458
TL F 9458 – 1
RRD-B30M75 Printed in U S A



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74F10 pdf
Absolute Maximum Ratings (Note 1)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Storage Temperature
b65 C to a150 C
Ambient Temperature under Bias
b55 C to a125 C
Junction Temperature under Bias
Plastic
b55 C to a175 C
b55 C to a150 C
VCC Pin Potential to
Ground Pin
b0 5V to a7 0V
Input Voltage (Note 2)
b0 5V to a7 0V
Input Current (Note 2)
b30 mA to a5 0 mA
Voltage Applied to Output
in HIGH State (with VCC e 0V)
Standard Output
TRI-STATE Output
b0 5V to VCC
b0 5V to a5 5V
Current Applied to Output
in LOW State (Max)
twice the rated IOL (mA)
Note 1 Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired Functional operation under
these conditions is not implied
Note 2 Either voltage limit or current limit is sufficient to protect inputs
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
Commercial
b55 C to a125 C
0 C to a70 C
Supply Voltage
Military
Commercial
a4 5V to a5 5V
a4 5V to a5 5V
DC Electrical Characteristics
Symbol
Parameter
54F 74F
Min Typ Max
Units VCC
Conditions
VIH
VIL
VCD
VOH
VOL
IIH
Input HIGH Voltage
Input LOW Voltage
Input Clamp Diode Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Current
54F 10% VCC
74F 10% VCC
74F 5% VCC
54F 10% VCC
74F 10% VCC
54F
74F
20
25
25
27
V Recognized as a HIGH Signal
08 V
Recognized as a LOW Signal
b1 2 V Min IIN e b18 mA
IOH e b1 mA
V Min IOH e b1 mA
IOH e b1 mA
0 5 V Min IOL e 20 mA
0 5 IOL e 20 mA
20 0
50
mA Max VIN e 2 7V
IBVI Input HIGH Current 54F
Breakdown Test
74F
100
7 0 mA Max VIN e 7 0V
ICEX
Output HIGH
Leakage Current
54F
74F
250
50 mA Max VOUT e VCC
VID Input Leakage 74F
Test
4 75
V 0 0 IID e 1 9 mA
All other pins grounded
IOD
Output Leakage
74F
Circuit Current
3 75 mA 0 0 VIOD e 150 mV
All other pins grounded
IIL
IOS
ICCH
ICCL
Input LOW Current
Output Short-Circuit Current
Power Supply Current
Power Supply Current
b0 6 mA Max VIN e 0 5V
b60
b150 mA Max VOUT e 0V
14 21
mA Max VO e HIGH
51 77
mA Max VO e LOW
2



Part Number 74F10
Description Triple 3-Input NAND Gate
Maker National Semiconductor - National Semiconductor
Total Page 6 Pages
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