http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Vishay Intertechnology Electronic Components Datasheet


71090

P-Channel 30-V (D-S) MOSFET


No Preview Available !

71090 pdf
P-Channel 30-V (D-S) MOSFET
Si3455ADV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.100 @ VGS = 10 V
30
0.170 @ VGS = 4.5 V
ID (A)
3.5
2.7
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3455ADV-T1
Si3455ADV-T1—E3 (Lead Free)
Marking Code:
A5xxx
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS "20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
3.5
2.7
2.8
2.1
20
1.7
0.95
2.0 1.14
1.3 0.73
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71090
S-40424—Rev. C, 15-Mar-04
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
90
30
Maximum
62.5
110
36
Unit
_C/W
www.vishay.com
1



No Preview Available !

71090 pdf
Si3455ADV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85_C
VDS v 5 V, VGS = 10 V
VGS = 10 V, ID = 3.5 A
VGS = 4.5 V, ID = 2.7 A
VDS = 15 V, ID = 3.5 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 10 V, ID = 3.5 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0
20
3.0
"100
1
5
0.080
0.140
6
0.8
0.100
0.170
1.2
V
nA
mA
A
W
S
V
8.5 13
2.2 nC
1.5
10 20
7 15
20 35 ns
10 20
30 60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 10 thru 7 V
16
6V
5V
12
8
4V
4
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS Drain-to-Source Voltage (V)
Transfer Characteristics
20
TC = 55_C
16
25_C
12
125_C
8
4
0
01234567
VGS Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71090
S-40424—Rev. C, 15-Mar-04



Part Number 71090
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix - Vishay Siliconix
Total Page 4 Pages
PDF Download
71090 pdf
Download PDF File
71090 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
7100 T- Subminiature Lamps 7100
Gilway Technical Lamp
PDF
7100MD9AV2BE Toggle Switches 7100MD9AV2BE
ITT Industries
PDF
7100MD9AV2BE Rocker and Lever Handle Switches 7100MD9AV2BE
ITT Industries
PDF
7100MD9AV2QE Toggle Switches 7100MD9AV2QE
ITT Industries
PDF
7100MD9AV2QE Rocker and Lever Handle Switches 7100MD9AV2QE
ITT Industries
PDF
7101 T- Subminiature Lamps 7101
Gilway Technical Lamp
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components