http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Fairchild Semiconductor Electronic Components Datasheet



70N08

N-Channel MOSFET



No Preview Available !

70N08 pdf
FQA70N08
80V N-Channel MOSFET
August 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
www.DataSheet4U.com planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Features
• 77.5A, 80V, RDS(on) = 0.017@VGS = 10 V
• Low gate charge ( typical 75 nC)
• Low Crss ( typical 180 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
G DS
TO-3P
FQA Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQA70N08
80
77.5
54.8
310
± 25
1150
77.5
19
6.5
190
1.27
-55 to +175
300
Typ
--
0.24
--
Max
0.79
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A, August 2000



No Preview Available !

70N08 pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
80 -- -- V
ID = 250 µA, Referenced to 25°C -- 0.08 -- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
VDS = 64 V, TC = 150°C
-- -- 1 µA
-- -- 10 µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- -- 100 nA
-- -- -100 nA
www.DataSheet4U.com
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 38.75 A
VDS = 30 V, ID = 38.75 A (Note 4)
2.0 --
4.0
-- 0.013 0.017
-- 43
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2100 2700
-- 790 1030
-- 180 230
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 40 V, ID = 70 A,
RG = 25
-- 25
60
-- 300 610
-- 90 190
(Note 4, 5)
--
145
300
VDS = 64 V, ID = 70 A,
VGS = 10 V
(Note 4, 5)
--
--
--
75
14
37
98
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 77.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 70 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.265mH, IAS = 77.5A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 70A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 77.5
-- 310
-- 1.5
84 --
250 --
A
A
V
ns
nC
©2000 Fairchild Semiconductor International
Rev. A, August 2000



Part Number 70N08
Description N-Channel MOSFET
Maker Fairchild Semiconductor - Fairchild Semiconductor
Total Page 8 Pages
PDF Download
70N08 pdf
Download PDF File
70N08 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
70N03 N-channel Enhancement-mode MOSFET 70N03
General Semiconductor
PDF
70N03 Power-Transistor 70N03
Tuofeng Semiconductor
PDF
70N03 N-Channel Enhancement Mode Power MOSFET 70N03
Anachip
PDF
70N03 N-Ch 30V Fast Switching MOSFETs 70N03
Cmos
PDF
70N03 N-Channel MOSFET 70N03
CANYU
PDF
70N03 N-CHANNEL MOSFET 70N03
BLUE ROCKET ELECTRONICS
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components