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BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS


70N03

N-CHANNEL MOSFET


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70N03 pdf
BRI70N03
Rev.D Nov.-2015
DATA SHEET
描述 / Descriptions
TO-251 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-251 Plastic Package.
特征 / Features
具有低导通电阻的超高密度设计,坚固可靠,表面贴装封装。
Super high dense cell design for low RDS(on), Rugged and reliable,surface.
用途 / Applications
用于高功率 DC/DC 转换和功率开关。
These devices are well suited for high efficiency switching DC/DC converters and switch mode power
supplies.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1
2
3
PIN1G
PIN 2D
PIN 3S
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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70N03 pdf
BRI70N03
Rev.D Nov.-2015
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Drain Current
Drain Current Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Power Dissipation
Power Dissipation (TA=25)
Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
符号
Symbol
VDSS
ID(Tc=25)
IDM
VGS
ESA
PD
PD(Tc=25)
TJ,TSTG
RθJA
数值
Rating
30
62.8
140
±20
71.7
1.36
62.5
-55 to 150
110
单位
Unit
V
A
A
V
mJ
W
W
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Drain-Source Diode Forward
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
符号
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
VSD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
测试条件
Test Conditions
VGS=0V
ID=250μA
VDS=20V VGS=0V
VGS=±20V VDS=0V
VDS=VGS
VGS=10V
VGS=4.5V
VDS=10V
ID=250μA
ID=20A
ID=20A
ID=15A
VGS=0V
IS=20A
VDS=20V
f=1.0MHz
VGS=0V
VDD=10V
VGS=10V
ID=36A
RG=3.0
最小值 典型值
Min Typ
30
1.0 1.5
5.6
8.1
27
1333
600
218
6.9
1.3
18.4
5.5
最大值
Max
1.5
±0.1
2.0
8.0
13
1.2
单位
Unit
V
μA
μA
V
m
m
S
V
pF
ns
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Part Number 70N03
Description N-CHANNEL MOSFET
Maker BLUE ROCKET ELECTRONICS - BLUE ROCKET ELECTRONICS
Total Page 6 Pages
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