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Micropac Industries
Micropac Industries


61055-103

SILICON PHOTOTRANSISTOR PILL PACK


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61055-103 pdf
61055
SILICON PHOTOTRANSISTOR “PILL PACK”
(TYPE GS1020)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
REVISION B 02/22/01
Features:
Hermetically sealed
High sensitivity
Small package
Suitable for high-density pc board mounting
Spectrally matched to the 62000 Series LED.
Applications:
Incremental Encoding
Reflective Sensors
Position Sensors
Level Sensors
DESCRIPTION
The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit
board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark
current leakage, and low saturation voltage make this device ideal for interfacing with TTL circuits. Available custom binned
to customer specifications or screened to MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Temperature ....................................................................................................................................-55°C to +125°C
Collector-Emitter Voltage........................................................................................................................................................ 50V
Emitter-Collector Voltage.......................................................................................................................................................... 6V
Power Dissipation (Derate at the rate of 0.5 mW/°C above 25°C) ....................................................................................50mW
Lead Soldering Temperature (10 seconds) ....................................................................................................................... 240°C
Package Dimensions
Schematic Diagram
0.019 [0.48]
0.009 0.23]
Ø0.061 [1.55]
Ø0.058 [1.47]
CERAMIC
LENS
0.092 [2.34]
0.084 [2.13]
COLLECTOR
0.067 [1.70]
0.063 [1.60]
0.088 [2.24]
0.082 [2.08]
0.010 [0.25]
0.005 [0.013]
0.115 [2.92]
0.102 [2.59]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
R0.010 ±0.001 [0.25]
EMITTER
0.240 [0.61]
0.016 [0.41]
C
E
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
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61055-103 pdf
61055
REVISION B
02/22/01
SILICON PHOTOTRANSISTOR “PILL PACK” (TYPE GS1020)
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified.
PARAMETER
SYMBOL MIN TYP MAX
Light Current
61055-X01
0.5 3.0
61055-X02
61055-X03
IL
2.0
4.0
5.0
8.0
61055-X04
7.0 12.0
61055-X05
12.0 20.0
61055-X06
20.0 --
Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Light Current Rise Time
61055-XXX
61055-XXX
61055-XXX
61055-X01
ID
BVCEO
BVECO
50
7
2.0
25
61055-X02
3.0
61055-X03
61055-X04
tr
5.0
7.0 12.0
61055-X05
9.0 20.0
61055-X06
12.0 --
Saturation Voltage
Angular Response
61055-X0X
61055-X0X
VCE (sat)
θ
0.3
24
UNITS
mA
nA
V
V
µsec
V
degrees
NOTES:
1. Irradiance in mW/cm2 from a tungsten source at a color temperature of 2870K.
2. The angle between incidence for peak response and incidence for 50% of peak response.
TEST CONDITIONS
VCE = 5.0V, H = 20Mw/cm2
VCE = 30V, H = 0
IC = 100µA
IE = 100µA
RL = 1K, VCC = 5V,
IL = 1.0mA
IC = 0.4mA, H = 20mW/cm2
RL = 1K, VCC = 5V,
IL = 1.0mA
NOTE
1
1
2
ANGULAR RESPONSE
RELATIVE SPECTRAL RESPONSE
PULSE RESPONSE TEST
Vcc CIRCUIT AND WAVEFORM
90%
H DUT
IL RL
OUTPUT
10%
tr
tf
ANGULAR RESPONSE
100
80
60
40
20
0
-40 -30 -20 -10
0 10 20
30 40
ANGLE [DEGREES]
2 .0
1 .8
1 .6
1 .4
1 .2
1 .0
0 .8
0 .6
0 .4
0 .2
0
-1 00
NORMALIZED LIGHT CURRENT
versus TEMPERATURE
V cc = 5.0 V
NOTE 1
RL =100
-75 -50 -25
0 25
50
75
100
125
TA A M B I E N T T E M P E R A T U R E [ ° C ]
150
10
1.0
0.1
0.01
0.2
RELATIVE SPECTRAL RESPONSE
100
90
80
70
60
50
40
30
20
10
0
0.2 0.3 0.4
0.5 0.6 0.7
0.8 0.9
1.0 1.1 1.2
WAVELENGTH [um]
NORMALIZED LIGHT CURRENT
versus RADIATION FLUX DENSITY
TJ = 2 5 °C
VC C= 50 V
GaAs
SOURCE
TUNGSTEN
SOURCE
0.5 1.0 20
5.0
N RADIATION FLUX DENSITY [mW /cm 2]
10 20
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
6 - 11



Part Number 61055-103
Description SILICON PHOTOTRANSISTOR PILL PACK
Maker Micropac Industries - Micropac Industries
Total Page 3 Pages
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